Abstract:In this paper, Poisson's equation is utilized to find the potential distribution inside the channel of an independent gate FinFET device by adding the effect of channel height. The channel height of the device plays an important role in surface potential calculation when top gate voltage is applied. Using surface potential, an I − V model is developed, which can find the device current both in linear and saturation regions of operation. The model is tested on devices of different dimensions and good agreement … Show more
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