Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

Abstract

A simple model based on the WKB approximation for one-dimensional ballistic multi-gate reconfigurable fieldeffect transistors (RFETs) with Schottky-Barrier contacts has been developed for the drain current taking into account electron and hole band-to-band tunneling. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral can be obtained. A comparative analysis of the twogate and triple-gate RFETs is performed based on the numerical integration of the current integral.Index Terms-Carbon-nanotube field-effect transistor (CNT-FET), analytical transport model, Schottky barrier (SB), bandto-band tunneling (BTBT), Wentzel-Kramers-Brillouin (WKB) approximation.