Novel III-N heterostructure devices for low-power logic and more

Fay, Patrick; Li, W.; Cao, Lina; Pourang, Kasra; Islam, S. M.; Lund, Cory; Saima, Sabrina; Ilatikhameneh, Hesameddin; Amin, T. M. F.; Huang, Jun; Rahman, Rajib; Jena, Debdeep; Keller, S.; Klimeck, Gerhard

doi:10.1109/nano.2016.7751336

Cited by 4 publications

(2 citation statements)

References 14 publications

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“…The layer structure used in this work is similar to that used for nitride TFETs [28,29], although in this study the InGaN tunneling layer was omitted to avoid any convolution in the characterization of the p-layers. Initially, 2 μm thick U.I.D.…”

Section: Methodsmentioning

confidence: 99%

Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD

Lund

Agarwal

Romanczyk

et al. 2018

Semicond. Sci. Technol.

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In this study we explored p-type δ-doping for the deposition of N-polar p-GaN films at 900 °C, for application in device structures containing high In composition active layers. Various δdoping process parameters were investigated, including the duration and molar flow of the Mg precursor during each pulse as well as the δ-doping period. The results were compared to those obtained for layers grown using continuous doping. As the δ-doping period was reduced from 25 to 5 nm, the p-GaN bulk resistivity decreased from 6.8 to 2.8 W cm. The p-layer resistivity rose with increasing [Mg] independent of the doping scheme. For similar average [Mg], however, continuous doping resulted in a lower resistivity compared to δ-doping. This effect was more pronounced at higher [Mg], indicating that high local concentrations of Mg resulted in degradation of the electrical performance. After optimization of the p-layer structure and contact fabrication process, a minimum contact resistance of 2.77 mW cm 2 and a minimum resistivity of 1.33 W cm were achieved.

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Section: Methodsmentioning

confidence: 99%

Investigation of Mg δ-doping for low resistance N-polar p-GaN films grown at reduced temperatures by MOCVD

Lund

Agarwal

Romanczyk

et al. 2018

Semicond. Sci. Technol.

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“…Based on the local neutralization principle, holes are consequently induced to neutralize these negative bound sheet charges, which thus forms the P-type doping of source region. Although there is some degradation of hole Actually, in some novel III-nitride heterojunction TFETs with physical doping source and drain [21,23,36], the polarization-induced technique has been used to enhance the doping concentration in the part of source region near the gate, based on which the on-state current and turn-on characteristics could be improved significantly. These reports could also demonstrate the effectiveness and potential of polarization-induced technique in realizing the doping of TFETs to a degree.…”

Section: Analyses Of Distributions Of Carriers and Polarization Charg...mentioning

confidence: 99%

A polarization-induced InN-based tunnel FET without physical doping

Mao

Peng

Yang

et al. 2019

Semicond. Sci. Technol.

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A new design approach for TFETs without physical doping is provided and demonstrated based on the polarization effect for the first time in this paper. And a polarization-induced InN-based TFET (PI-InN-TFET) is proposed and investigated by two-dimensional numerical simulations. Compared with the conventional physical doping InN-based TFET (D-InN-TFET), the proposed device features the formation of P-type source and N-type drain induced by the polarization effect near the InN-based heterojunctions without the need for any physical doping, which makes it possible for the PI-InN-TFET to avoid the random dopant fluctuation (RDF) and the problems related to the high thermal annealing techniques. Simulation results exhibit that the performance of the PI-InN-TFET is better than that of the optimized D-InN-TFET. Besides, the proposed PI-InN-TFET could be realized by the mature fabrication processing of the field-plated GaN-based HEMTs and could be further improved by introducing other techniques such as L-shaped TFET, T-shaped TFET.

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