InGaAs–GaAs Nanowire Avalanche Photodiodes Toward Single-Photon Detection in Free-Running Mode

Abstract

Single photon detection at near-infrared (NIR) wavelengths is critical for light detection and ranging (LiDAR) systems used in imaging technologies such as autonomous vehicle trackers and atmospheric remote sensing. Portable, high-performance LiDAR relies on silicon-based singlephoton avalanche diodes (SPADs) due to their extremely low dark count rate (DCR) and afterpulsing probability, but their operation wavelengths are typically limited up to 905 nm. Although InGaAs-InP SPADs offer an alternative platform to extend the operation wavelengths to eye-safe ranges, their high DCR and afterpulsing severely limit their commercial applications. Here we propose a new selective absorption and multiplication avalanche photodiode (SAM-APD) platform composed of vertical InGaAs-GaAs nanowire arrays for single photon detection. Among a total of 4400 nanowires constituting one photodiode, each avalanche event is confined in a single nanowire, which means that the avalanche volume and the number of filled traps can be drastically reduced in our approach. This leads to an extremely small afterpulsing probability compared with conventional InGaAs-based SPADs and enables operation in free-running mode. We show DCR below 10 Hz, due to reduced fill factor, with photon count rates of 7.8 MHz and timing jitter less than 113 ps, which suggest that nanowire-based NIR focal plane arrays for single photon detection can be designed without active quenching circuitry that severely restricts pixel density and portability in NIR commercial SPADs. Therefore, the proposed work based on vertical nanowires provides a new degree of freedom in designing avalanche photodetectors and could be a stepping stone for high-performance InGaAs SPADs.

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

“…Linear mode APDs have been reported in ensemble InGaAs/GaAs core-shell nanoneedles [91], exhibiting extremely high gain values at bias voltages significantly below breakdown [92] due to the reduction of active material volume. More significantly, a vertical InGaAs/GaAs nanowire array separate absorption-multiplication (SAM) APD operating in Geiger mode has also been demonstrated recently [93]. The nanowire array contained thousands of nanowires with each avalanche event confined in a single nanowire, drastically reducing the avalanche volume and the number of filled traps.…”

“…The nanowire array contained thousands of nanowires with each avalanche event confined in a single nanowire, drastically reducing the avalanche volume and the number of filled traps. This led to an extremely small afterpulsing probability compared with conventional InGaAs-based single-photon avalanche diodes (SPADs) and enabled operation in free-running mode up to 150 K, which is attractive for emerging integrated photonics and quantum information applications [93].…”

Compositional and structural engineering of inorganic nanowires toward advanced properties and applications

“…1D core‐shell heterojunction nanostructures have great potential for high‐performance compact optoelectronic devices owing to their high interface area‐to‐volume ratio . To date, core‐shell heterostructure nanowire systems, such as InAs/AlSb, InGaAs‐GaAs, ZnO/CuCrO 2 , and GaN/AlN, with outstanding performance as photodetectors have been reported . For example, β‐Ga 2 O 3 is an excellent candidate for solar‐blind photodetection, with a direct wide bandgap of ~ 4.9 eV (253 nm).…”

“…152 To date, core-shell heterostructure nanowire systems, such as InAs/AlSb, InGaAs-GaAs, ZnO/CuCrO 2 , and GaN/AlN, with outstanding performance as photodetectors have been reported. [153][154][155][156] For example, β-Ga 2 O 3 is an excellent candidate for solarblind photodetection, with a direct wide bandgap of 4.9 eV (253 nm). Most β-Ga 2 O 3 nanostructure-based photodetectors are photoconductive with a relatively slow response speed due to the persistent photoconductivity effect.…”

3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode

“…Recently GaAs-based nanowire APDs and SPADs have been demonstrated experimentally with impressive properties including large lattice mismatch accommodation, low dark current and high avalanche gain in the near infrared regime [8], [9] due to its very small active volume compared to its planar counterpart. For instance, Senanayake et al reported a GaAs nanowire APD [8] with high avalanche gain above 100.…”