InGaAs diode laser system generating pulses of 580 fs duration and 366 W peak power

Ulm, Thorsten; Harth, Florian; Fuchs, H.; L’huillier, Johannes A.; Wallenstein, R.

doi:10.1007/s00340-008-3121-4

Cited by 14 publications

(5 citation statements)

References 24 publications

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“…5 Compared to a simple grating pair this type of compressor has the advantage that negative or positive dispersion can be applied to a pulse. Sign and amount of dispersion depends on the relative position of lenses and gratings.…”

Section: Methodsmentioning

confidence: 99%

“…Lower repetition rates have been demonstrated by use of external cavities [5][6][7] or pulse picking. 8 GHz repetition rate lasers offer the advantage of a high average power, because a short repetition time allows for an efficient energy extraction from the semiconductor gain medium.…”

Section: Introductionmentioning

confidence: 97%

“…7,12 However, the low output power of few tens of milliwatts from a single-stripe oscillator requires a high-power amplification stage, which usually tends to introduce pulse broadening. We therefore abandon the attempt to form femtosecond pulses within the laser cavity and rely on the principle of chirped-pulse amplification (CPA) instead 5,6 to maximize the energy extraction from the amplifier. We can then take advantage from the fact that our master oscillators emit spectrally broad picosecond pulses.…”

Section: Introductionmentioning

confidence: 99%

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Passively mode-locked 1 GHz MOPA system generating sub-500-fs pulses after external compression

et al. 2012

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We compared the performance of DQW and TQW edge-emitters in a passively mode-locked 1 GHz MOPA system at 1075 nm wavelength. Passive mode-locking is induced by applying a reverse DC voltage to the absorber section. The average power is increased up to 0.9 W by a single-stripe pre-amplifier and a tapered amplifier. After compensation of the quadratic chirp in a grating compressor we achieved a pulse duration of 342 fs. We found that the oscillator gain current and the absorber bias voltage have significant impact on the pulse duration. Both parameters were used to optimize the MOPA system with respect to the shortest pulse length after compression.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Passively mode-locked 1 GHz MOPA system generating sub-500-fs pulses after external compression

et al. 2012

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“…Higher pulse energies can be obtained by amplification of the pulses with master oscillator-power amplifier (MOPA) systems [5]. However, mostly the PA is operated in continuous wave (CW) operation.…”

Section: Introductionmentioning

confidence: 99%

Generation of sub-100 ps pulses with a peak power of 65 W by gain switching, pulse shortening, and pulse amplification using a semiconductor-based master oscillator–power amplifier system

et al. 2013

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We present a method of the generation of sub-100 ps pulses with an all-semiconductor master oscillator-power amplifier (MOPA) system, consisting of a three section distributed Bragg reflector (DBR) laser as MO and a two section tapered PA. The pulses generated by the gain-switched DBR laser are first shortened by the ridge-waveguide input section of the PA acting as a saturable absorber and then amplified by the tapered gain region section. We generate laser pulses with a minimum duration of 35 ps and a peak power of more than 65 W. The spectral width is less than 0.25 nm around a center wavelength of 1063 nm.

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“…The suitability of a pulsed laser for nonlinear imaging can be quantified by a figure-of-merit (FOM) that is defined by the product of squared peak power times the duty cycle, thus being a measure for the generated TPEF signal [2]. Much simpler and robust pulsed all-semiconductor laser systems have already demonstrated exceptionally high pulse peak power and FOM of 100 W and 27 W 2 , respectively, at a wavelength of 800 nm [3], 366 W (311 W 2 ) at 922 nm [4], 1.4 kW (271 W 2 ) at 975 nm [5], 2.5 kW (1281 W 2 ) at 830 nm [6], and 6.5 kW (5233 W 2 ) at 850 nm [7]. All systems use an external-cavity configuration and employ, except of [3], pulse post-compression techniques.…”

mentioning

confidence: 99%

Picosecond pulse amplification up to a peak power of 42 W by a quantum-dot tapered optical amplifier and a mode-locked laser emitting at 126 µm

et al. 2015

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We experimentally study the generation and amplification of stable picosecond-short optical pulses by a master oscillator power-amplifier configuration consisting of a monolithic quantum-dot-based gain-guided tapered laser and amplifier emitting at 1.26 µm without pulse compression, external cavity, gain- or Q-switched operation. We report a peak power of 42 W and a figure-of-merit for second-order nonlinear imaging of 38.5 W2 at a repetition rate of 16 GHz and an associated pulse width of 1.37 ps.

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InGaAs diode laser system generating pulses of 580 fs duration and 366 W peak power

Cited by 14 publications

References 24 publications

Passively mode-locked 1 GHz MOPA system generating sub-500-fs pulses after external compression

Passively mode-locked 1 GHz MOPA system generating sub-500-fs pulses after external compression

Generation of sub-100 ps pulses with a peak power of 65 W by gain switching, pulse shortening, and pulse amplification using a semiconductor-based master oscillator–power amplifier system

Picosecond pulse amplification up to a peak power of 42 W by a quantum-dot tapered optical amplifier and a mode-locked laser emitting at 126 µm

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