Infrared study of hydrogen adsorbed on<i>c</i>(2×8) and (2×6) GaAs(100)

Qi, Haihua; Gee, Paul E.; Hicks, Robert F.

doi:10.1103/physrevlett.72.250

Cited by 52 publications

(31 citation statements)

References 22 publications

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“…Infrared spectroscopy of adsorbed hydrogen is well suited for this task, since hydrogen atoms titrate the dangling bonds, and the frequencies of the M-H stretching vibrations are very sensitive to the local chemical environment on the surface. [12][13][14][15][16][17][18] To help analyze the data, one can compare the infrared spectra with those obtained for gas-phase molecules.…”

Section: Introductionmentioning

confidence: 99%

Ab initiocluster calculations of hydrogenated GaAs(001) surfaces

Hicks

2000

Phys. Rev. B

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Hydrogen adsorption on the ͑2ϫ4͒ and ͑4ϫ2͒ reconstructions of gallium arsenide ͑001͒ has been studied by internal reflectance infrared spectroscopy and ab initio cluster calculations with density-functional theory. The calculations are made on Ga 5 As 4 H 11,13 , Ga 4 As 5 H 11,13 , and Ga 7 As 8 H 19 clusters, which model the arsenic-and gallium-dimer termination of the semiconductor surface. Excellent agreement has been achieved between the vibrational frequencies predicted by the theory and those observed in experiments. On the ͑2ϫ4͒, hydrogen adsorbs on arsenic dimers to form isolated and coupled arsenic-monohydrogen bonds, and arsenic-dihydrogen bonds. Conversely, on the ͑4ϫ2͒, hydrogen adsorbs on gallium dimers to form terminal and bridged gallium hydrides. The latter species occur in isolated or coupled structures involving two or three Ga atoms.

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Section: Introductionmentioning

confidence: 99%

Ab initiocluster calculations of hydrogenated GaAs(001) surfaces

Hicks

2000

Phys. Rev. B

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“…6,8,9,28 The relatively intense band at 2135 cm -1 can be attributed to molecularly adsorbed arsine. Gasphase AsH 3 exhibits asymmetric and symmetric stretching modes at 2123 and 2116 cm -1 , respectively.…”

Section: Arsine Adsorption At 297 Kmentioning

confidence: 99%

“…The film surface plays a crucial role in this process, because it mediates the decomposition of the group III and group V reagents. [4][5][6][7][8][9][10][11][12][13] It is essential to understand the heterogeneous decomposition reactions because they affect the growth rate, film composition, film morphology, and dopant profiles, all of which impact device performance.…”

Section: Introductionmentioning

confidence: 99%

“…The active layers in these devices are grown on the (001) plane of gallium arsenide by metalorganic vapor-phase epitaxy (MOVPE). [1][2][3][4][5][6][7][8][9][10] In this process, volatile precursors of the group III and group V elements in a hydrogen carrier gas are fed into a reactor containing a substrate heated to between 773 and 923 K. [1][2][3] The precursors adsorb and decompose on the wafer surface, depositing a single-crystal film that is lattice-matched to the GaAs substrate. The film surface plays a crucial role in this process, because it mediates the decomposition of the group III and group V reagents.…”

Section: Introductionmentioning

confidence: 99%

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Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface

Lian

et al. 2000

J. Phys. Chem. B

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The kinetics and mechanism of arsine adsorption on the (4 × 2) surface of gallium arsenide (001) has been studied by scanning tunneling microscopy, infrared spectroscopy, and ab initio quantum chemistry calculations. Arsine forms a dative bond to a gallium dimer. Then, this species either desorbs from the surface or decomposes to an AsH 2 or AsH fragment with hydrogen transfer to an arsenic site. Finally, desorption of hydrogen leaves arsenic dimers on the surface. The energy barriers for arsine desorption and dissociation into AsH 2 are estimated to be 9.3 and 16.5 kcal/mol, respectively. Gallium hydride is not produced upon dissociation of AsH 3 because this process is not energetically favorable.

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“…These peaks are due to the asymmetric and symmetric stretching vibrations of CH V speices [12][13][14]. No As and Ga hydrides are found, indicating that the surface is not terminated with hydrogen [15].…”

Section: The (2;1)/c(4;4) Phasementioning

confidence: 98%

Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy

Han

Law

et al. 1998

Journal of Crystal Growth

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Thin films of GaAs and InAs were deposited on GaAs(0 0 1) substrates by metalorganic vapor-phase epitaxy (MOVPE), and their surfaces were characterized by scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and low-energy electron diffraction (LEED). Gallium arsenide surfaces produced in the MOVPE reactor at 570°C and a V/III ratio of 50 exhibit a (1;2) reconstruction, and are covered with weakly bound alkyl groups. Heating this material in flowing hydrogen in the reactor produces a variety of surface phases, depending on the sample temperature. These phases include (2;4) and (4;2) reconstructions, all of which are terminated with As or Ga dimers. The surfaces of InAs films grown by MOVPE exhibit these same phases. This study demonstrates that compound semiconductor surfaces formed in the MOVPE environment are nearly the same as those produced by molecular-beam epitaxy under ultrahigh vacuum conditions.

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Infrared study of hydrogen adsorbed onc(2×8) and (2×6) GaAs(100)

Cited by 52 publications

References 22 publications

Ab initiocluster calculations of hydrogenated GaAs(001) surfaces

Ab initiocluster calculations of hydrogenated GaAs(001) surfaces

Mechanism of Arsine Adsorption on the Gallium-Rich GaAs(001)−(4 × 2) Surface

Gallium arsenide and indium arsenide surfaces produced by metalorganic vapor-phase epitaxy

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