Infrared Quenching of Photocapacitance in ZnS: Ag Evaporated Thin Films

Abstract

Spontaneous magnetization as a function of temperature is investigated for a number of disordered Ni-Fe-Mo and Ni-Fe-W alloys using superconducting quantum interference device magnetometry, with a focus on the low-T behaviour as well as the critical exponents associated with the magnetic phase transition. While the low-T magnetization is found to be well described by Bloch's T 3/2 law, extraordinary enhancements of the spin-wave parameter B and the reduced coefficient B 3/2 = BT 3/2 C are observed with increasing Fe dilution as compared to conventional 3d ferromagnets, whereas the critical amplitudes are found to decrease systematically. Recent locally self-consistent calculations of finite-temperature spin dynamics in a generic diluted magnet provide an understanding in terms of two distinct energy scales associated with weakly coupled bulk spins in the ferromagnetic matrix and strongly coupled cluster spins. In view of the similar behaviour observed in diluted magnetic semiconductors and other ferromagnetic alloys, it is proposed that these distinctive features corresponding to the three important temperature regimes provide macroscopic indicators of signature effects of spin clustering on the magnetization behaviour in disordered ferromagnets.

High-speed ultraviolet-visible-near infrared photodiodes based on p-ZnS nanoribbon–n-silicon heterojunction

“…22 It has been previously reported that group I metals such as Ag and Cu are fast-diffusing impurities in II-VI compounds, by this token, Ag + ions can occupy the Zn 2+ lattice sites in ZnS and can act as effective luminescent centers which are known to form the so-called blue centers. 23,24 Besides the contribution to optical property, the substitutional doping of Ag + in the ZnS NRs by replacing Zn 2+ could also account for the observed p-type characteristic of the NRs which will be discussed later on.…”

Large conductance switching nonvolatile memories based on p-ZnS nanoribbon/n-Si heterojunction

“…Therefore, Cu + can occupy the Zn 2+ lattice sites in ZnS, which leads to the p-type characteristics of the NRs. 29,30 In order to assess the electrical properties of the ZnS : Cu NRs, back-gate FETs were constructed on the individual NRs. Fig.…”