High-speed ultraviolet-visible-near infrared photodiodes based on p-ZnS nanoribbon–n-silicon heterojunction

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

“…Additionally, based on the high-quality ZnS NRs and achievement on ohmic contact, Yu et al constructed a kind of photodiodes by p-ZnS nanoribbon and n-Si substrate with a response speed as high as~48 ms (rise time). Furthermore, the device also exhibits stable optoelectrical properties with high sensitivity to UV-VIS-NIR light and an enhancement of responsivities of 1.1 × 10 3 AW −1 for 254 nm under a reverse bias of 0.5 V [48]. Bie et al prepared self-powered ZnO/GaN nanoscale p-n junctions photodetector with fast response time (219 µs) [55].…”

“…The stepwise process for the construction of the ZnSe nanowire/Si heterojunction is shown in the Figure 8. Many other heterojunctions were fabricated based on the above constructions method, such as ZnSe nanoribbon/Si nano-heterojunction [45], CdS:Ga nanoribbon/Si heterojunctions [46], n-CdSe nanowire/p + -Si substrate heterojunction [47], p-ZnS nanoribbon/n-Si heterojunction [48], p-CdS nanoribbon/n-Si heterojunctions [49], n-CdS nanowire/p + -Si substrate hybrid p-n junction [50], ZnSe nanowire array/Si p-n heterojunctions [51], ZnSe nanowire/Si p-n heterojunctions [52], and so on. Furthermore, Xie et al firstly used a Ag-assisted chemical etching method to obtain patterned SiNWs array at particular area on the silicon substrate (Figure 9a).…”

Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

“…19 The difference between the two structures is the sequence of atomic layer stacking parallel to {111} for cubic or {0001} for hexagonal planes in the form of ABCABC or ABAB. Many theoretical and experimental efforts have been devoted to the fabrication of ZnS materials, [22][23][24][25][26][27] particularly those formed in a twodimensional manner that enables integrated fabrication and application of ZnS-based optoelectronic devices, and may also bring about some unique properties and functions. [28][29][30][31] However, the synthesis of large-area ZnS thin films with high crystal quality still remains challenging.…”

TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors

“…In order to quantify the performance of such a diode‐based PD, responsivity ( R ) and photoconductive gain ( G ), the two key parameters that reflect the sensitivity of a PD to the incident light, were calculated by using the following equations: where I P is the photocurrent, P opt is the incident light power, η is the quantum efficiency, h is Planck's constant, c is the speed of light, λ is the incident light wavelength, q is the unit of elementary charge, and G is the photoconductive gain, which is equal to the ratio of the number of electrons collected per unit time ( N el ) to the number of photons absorbed per unit time ( N ph ) or the ratio of carrier lifetime ( τ ) to carrier transit time ( τ tr ). On the basis of these values and formulas, R is estimated to be 15 AW − 1 at a bias of −5 V, assuming η = 1 for simplification.…”