For vitreous antimony trisulfide films (thickness 6.4 to 16.1 pm) the steady-state current-voltage characteristics were measured. The currents proportional to U 2 are interpreted in terms of space-charge-limited currents (SCLC) with a single trap level. It is proved that a steep current increase a t the end of the square-law region is caused by trap filling. The values of the parameters of this trapping level calculated using two independent methodsfrom the temperature dependence of the reduction factor 8 and from the trap-filled limit (TFL) voltageare in close agreement. The polarization and the conduction mechanism of vitreous Sb2S, films a t lower temperatures are discussed.Es wurden stationare Strom-Spannungs-Charakteristiken an Schichten aus amorphem Sb,S, (6,4 bis 16,l pm) gemessen. Die Proportionalitat des Stromes zu U 2 d-, wird durch raumladungsbegrenzte Strome mit einem einzelnen Haftstellenniveau erklart. Es wird bewiesen, daB der scharfe Knick im Endbereich des quadratischen Teiles der Strom-Spannungs-Charakteristik bei der Spannung U Z -~ durch Fiillung des diskreten Haftstellenniveaus hervorgerufen wird. Die Parameter dieses Haftstellenniveaus wurden mit zwei voneinander unabhangigen Methoden bestimmt : aus der Temperaturabhangigkeit des Beduktionsfaktors 8 und aus der Analyse der Spannung U Z -~. Beide Methoden ergaben gute Ubereinstimmung. Die Polarisation und der Leitungsmechanismns von amorphen Sb,S,-Schichten bei niedrigen Temperaturen werden ebenfalls analysiert.
The dark steady‐state I–U characteristics of CdSe single crystals of high resistivity are measured. The temperature dependence of the I–U characteristics is interpreted in terms of space‐charge‐limited currents (SCLC) with a single trap level. The parameters of levels located in a forbidden gap are determined by combining SCLC technique with thermally stimulated current and Hall mobility, μ, measurements. It was found that μ = μ(T) is determined by the scattering due to clusters of imperfections. Depending on the location of the Fermi level relative to a single trap level a steep current increase at the end of the square law region can be caused by trap filling or field ionization. The article goes further into restrictions imposed on SCLC by the field ionization of traps.
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