1987
DOI: 10.1103/physrevb.36.7486
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Infrared photoexcitation and doping studies of poly(3-methylthienylene)

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Cited by 62 publications
(15 citation statements)
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“…4b, there are at least three orders of magnitude where σ > 0.1 S/cm at which transport can be described well by Boltzmann transport equations. Note that for highly doped conducting P3HT and PBTTT (σ > 100 S cm −1 ), bipolarons (spinless charge carriers) can be formed within the polymer backbones 23 , which then possibly cause a deviation from Fermi-Dirac statistics.…”
Section: Resultsmentioning
confidence: 99%
“…4b, there are at least three orders of magnitude where σ > 0.1 S/cm at which transport can be described well by Boltzmann transport equations. Note that for highly doped conducting P3HT and PBTTT (σ > 100 S cm −1 ), bipolarons (spinless charge carriers) can be formed within the polymer backbones 23 , which then possibly cause a deviation from Fermi-Dirac statistics.…”
Section: Resultsmentioning
confidence: 99%
“…In charge localization (see light arrows in Table 3), the lifting of the ground state degeneracy introduces a new gap Ac, which in the first approximation will add to the Hubbard gap A,,, because they act in phase together (Kim, Hotta and Heeger, 1987). This effect will occur, in particular, when the anion ordering process will induce a new periodicity (dimers tetramers); if there is no symmetry change a kind of structureless phase transition associated with an electronic localization can be proposed (Coulon, Parkin and Laversanne, 1985).…”
Section: Competition Between the Hubbard Gap And An External Potentialmentioning
confidence: 99%
“…[1][2][3][4][5][6][7]. As with traditional inorganic semiconductors, the electronic properties of semiconducting polymers can be effectively tuned through doping [8][9][10][11][12][13], by either removing (p-type doping) or adding (n-type doping) an electron to the polymer backbone. One of the most common ways to dope a semiconducting polymer is via the use of a molecular dopant, such as a small molecule, that can reduce or (much more commonly) oxidize the polymer backbone.…”
Section: Introductionmentioning
confidence: 99%
“…One of the most common ways to dope a semiconducting polymer is via the use of a molecular dopant, such as a small molecule, that can reduce or (much more commonly) oxidize the polymer backbone. [8,[14][15][16][17][18][19]. Indeed, the addition of small amounts of molecular dopants can improve the performance of polymer-based bulk heterojunction solar cells as the doped carriers fill intrinsic traps, [20][21][22][23][24] and more extensive molecular doping can vastly improve conductivity and carrier mobility for transistor [13,25] or thermoelectric [26,27] applications.…”
Section: Introductionmentioning
confidence: 99%