Influence of ZnO buffer layer on AZO film properties by radio frequency magnetron sputtering

Effect of calcination temperature on the structural, optical and magnetic properties of pure and Fe-doped ZnO nanoparticles

“…ZnO is a group II -IV semiconductor that has become one of the most promising candidates for potential applications in optoelectronics due to its wide band-gap (3.3 eV) and high exciton binding energy (60 meV) properties [1,2]. In order to optimize the structural, optical and magnetic properties of ZnO, a number of experiments have been done by various researchers either by using different capping agents or by doping ions into the ZnO lattice.…”

Taguchi method-optimized sputter deposition of hydrogenated gallium-doped zinc oxide films in argon/hydrogen ambient

“…To obtain optimal deposition condition, it is necessary to select an efficient analysis method. Some researchers have obtained optimal condition for GZO film by using the Taguchi design method [13][14][15].…”

Hydrothermally grown ZnO buffer layer for the growth of highly (4wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (111) substrates

“…This leads to high lattice strain, more defects and misfit strain of the GZO thin films [13,18]. Therefore, several research groups have examined the growth of ZnO and GZO epitaxial thin films by introducing hetero-buffer layers, such as MgO, GaN and SiC or ZnO homo-buffer layer, to overcome these difficulties occurring in between the thin films and substrates [19][20][21][22][23][24]. Khranovskyy et al [22] have reported that the crystallinity, photoluminescence characteristics and electrical properties of epitaxial ZnO thin films grown on a Al 2 O 3 substrate at 300 1C, are improved by introducing a ZnO buffer layer compared to the properties of pure ZnO films grown on a nonbuffered substrate.…”