2011
DOI: 10.1016/j.jcrysgro.2011.03.011
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Hydrothermally grown ZnO buffer layer for the growth of highly (4wt%) Ga-doped ZnO epitaxial thin films on MgAl2O4 (111) substrates

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Cited by 10 publications
(1 citation statement)
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“…It is well known that the nature of defects and grain boundaries of different thin films are strongly dependent on the crystal quality. The defects and grain boundary acts as free electron trap centers, which reduces the charge carrier concentration and become scattering centers, leading to a decrease in electrical mobility [24].…”
Section: Electrical Propertiesmentioning
confidence: 99%
“…It is well known that the nature of defects and grain boundaries of different thin films are strongly dependent on the crystal quality. The defects and grain boundary acts as free electron trap centers, which reduces the charge carrier concentration and become scattering centers, leading to a decrease in electrical mobility [24].…”
Section: Electrical Propertiesmentioning
confidence: 99%