Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films

Mughal, Asad J.; Carberry, Benjamin; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

doi:10.1007/s11664-016-5235-5

Cited by 8 publications

(5 citation statements)

References 29 publications

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“…The downward curvature at higher energy can partly be associated with deviations from the parabolic band approximation used in the models for the band structure (which can be seen in Figure ). A further effect, applicable to more heavily doped semiconductors is the Burstein–Moss effect, where the lowest allowable transitions are blocked by occupation considerations. This could change Tauc slopes, too.…”

Section: Discussionmentioning

confidence: 99%

Assessing Tauc Plot Slope Quantification: ZnO Thin Films as a Model System

Coulter

Birnie

2017

Physica Status Solidi (b)

212

107

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One of the most frequently used methods for characterizing thin films is UV–Vis absorption. The near‐edge region can be fitted to a simple expression where the intercept gives the band gap and the fitting exponent identifies the electronic transition as direct or indirect. [See Tauc et al., Physica Status Solidi 15, 627 (1966); naturally, these are usually called “Tauc” plots.] In earlier work, we found that direct band gaps fitted using Tauc's method can be quite accurate, to ∼1% [see Viezbicke et al., Phys. Status Solidi B 252, 1700 (2015)]. Still, slopes of these Tauc plots are less frequently quantified, even though the slopes are directly rooted in key band‐structure parameters. In this study, we examine the reproducibility of Tauc plot slopes for ZnO as a model direct‐gap material and compare these experimental values with the theoretically derived slope. In contrast to the band gap accuracy, the experimental slope values varied by several orders of magnitude. The histogram of slope values was significantly more compact for Tauc plots exhibiting less Urbach tail contribution. In these cases, the Tauc slopes can provide an order‐of‐magnitude quantification of other key band characteristics such as carrier effective mass.

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Section: Discussionmentioning

confidence: 99%

Assessing Tauc Plot Slope Quantification: ZnO Thin Films as a Model System

Coulter

Birnie

2017

Physica Status Solidi (b)

212

107

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“…The presence of porosity in the films would lower the films refractive index as well, since the total index would become a composite between air ( n = 1) and ZnO ( n ∼ 2). A more in‐depth analysis of the optical properties of doped ZnO thin films has been carried out in an earlier work . The supporting information includes the transmittance spectra for all films studied.…”

Section: Resultsmentioning

confidence: 99%

Optoelectronic properties of doped hydrothermal ZnO thin films

Mughal

Carberry²,

et al. 2017

Physica Status Solidi (a)

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Phone/Fax: þ8565057650Group III impurity doped ZnO thin films were deposited on MgAl 2 O 3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm À1 at 450 nm.

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“…Di erent types of synthesis have been applied to preparing ZnO, such as precipitation method, sol-gel, hydrothermal, and so on [25][26][27][28]. In the present work, we report hierarchically porous single-crystal leaflike ZnO nanosheets, which were successfully synthesized through an easy, economical, microwave-assisted solvothermal process [29,30] pursued by annealing of the pre-synthesized material at 500 C for 3 hours in the air atmosphere.…”

Section: Introductionmentioning

confidence: 91%

Application of microwave-assisted synthesized leaf-like ZnO nanosheets as the ethanol sensor

2019

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In this study, leaf-like zinc oxide (ZnO) nanosheets were successfully synthesized by the microwave-assisted method through an easy, low-cost solvothermal process with annealing at 500 C. Characterization of the synthesized material revealed the mesoporous single-crystal leaf-like ZnO nanosheets with hexagonal wurtzite structure. Mesoporous and single-crystal structure of gas sensor could provide high surface area, which led to the di usion of gas molecules and improvement of gas sensitivity. Consequently, the gas-sensing function of the leaf-like ZnO nanosheets was tested for di erent types of Volatile Organic Compounds (VOCs). Sensitivity, stability, response, and recovery time of leaf-like ZnO nanosheets sensor for ethanol vapor were the best at 255 C. According to results, leaf-like ZnO nanosheets are a selective and sensitive sensor for ethanol vapor.

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Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films

Cited by 8 publications

References 29 publications

Assessing Tauc Plot Slope Quantification: ZnO Thin Films as a Model System

Assessing Tauc Plot Slope Quantification: ZnO Thin Films as a Model System

Optoelectronic properties of doped hydrothermal ZnO thin films

Application of microwave-assisted synthesized leaf-like ZnO nanosheets as the ethanol sensor

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