2019
DOI: 10.7567/1347-4065/ab2c33
|View full text |Cite
|
Sign up to set email alerts
|

Influence of Zn–Si donor–acceptor pair traps in invert InGaP/GaAs dual-junction solar cell by MOCVD

Abstract: In In(Ga)P materials, Zn atoms diffuse into the adjacent Si doping layer at high temperatures, forming Zn–Si donor–acceptor pairs which function as non-radiation carrier recombination centers. The traps lead to decreased carrier diffusion length and separation efficiency in the space charge region of InGaP subcell, resulting in degradation of photoelectric conversion efficiency. In this paper, by adopting an InGaP p–i–n junction structure, the invert growth thin film cell was able to reach the same external qu… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2020
2020
2021
2021

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
references
References 25 publications
0
0
0
Order By: Relevance