Effects of Zn diffusion in tunnel junction and its solution for high efficiency large area flexible GaInP/GaAs/InGaAs tandem solar cell

Wang, B.; Fang, Liang; Aierken, Abuduwayiti; Tang, Zeguo; Du, Wenhui; He, Jiating; Huang, Jih-Jeng; Huang, Hua‐Dong; Yang, Weichen; Chen, K.; Li, J.; Yang, Xin; Zhuang, Yu; Zhang, W.N.; Mo, Jing

doi:10.1016/j.solmat.2021.111257

Cited by 12 publications

(2 citation statements)

References 31 publications

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“…It has many applications in optoelectronics devices because of its low resistivity and high optical conductivity [14]. Other combinations of materials such as AlGaAs/GaInP, AlGaAs/GaAs, AlGaAs/InGaAs, and AlGaAs/AlGaAs have been studied as tunnel diodes in different tandem solar cell structures [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

A numerical analysis of ZnTe/AZO as tunnel junction in CdTe/Si tandem solar cell

Isah

Doroody²,

Rahman³

et al. 2023

IOP Conf. Ser.: Mater. Sci. Eng.

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Recently, interest has shifted towards developing multijunction or tandem solar cells due to their high potential to generate higher efficiency than traditional single-junction solar cells. Cadmium telluride (CdTe) and silicon (Si) solar cell materials have demonstrated significant potential in photovoltaic energy generation as tandem structures if fully developed. One approach for optimising CdTe/Si is to develop an effective tunnel junction that can electrically and optically interconnect the cadmium telluride and silicon cells with minimal loss. The wxAMPS 3.0 numerical simulation was used in this work to develop CdTe/Si tandem using zinc telluride/aluminium doped zinc oxide (ZnTe/AZO) as a tunnel junction (TJ). The result obtained shows an optimum efficiency of over 36 % with Voc = 1.945 V, Jsc = 21.519 mA/cm2, and FF = 86.823 % utilising the optimal 200 nm CdTe and Si absorber thickness of 300 μm. An analysis of the demonstrated results suggests that ZnTe/AZO tunnel junction will significantly contribute to the realisation of the CdTe/Si tandem solar cell. Hence, upon inserting a 40 nm highly doped ZnTe/AZO tunnelling junction to a CdTe/Si tandem configuration, the solar cell’s performance was enhanced by 48.190%.

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Section: Introductionmentioning

confidence: 99%

A numerical analysis of ZnTe/AZO as tunnel junction in CdTe/Si tandem solar cell

Isah

Doroody²,

Rahman³

et al. 2023

IOP Conf. Ser.: Mater. Sci. Eng.

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“…The threading dislocations generated by lattice mismatch can be reduced by using graded composition buffer layers [10]. Moreover, the inverted growth of the subcells minimizes the effect of dislocation propagation from the buffer layer [11][12][13]. At present, the inverted metamorphic triple-junction (IMM3J) GaInP/GaAs/InGaAs solar cell has a high conversion efficiency of 37.9% (AM1.5,1-sun) [14] and 32.1% (AM0, 1-sun) [15].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

Yang

et al. 2022

Crystals

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Inverted metamorphic triple junction (IMM3J) GaInP/GaAs/InGaAs solar cells have the advantages of high efficiency, excellent radiation resistance, lightweight and flexible properties, especially suitable for space application. In this paper, we first fabricate the IMM3J GaInP/GaAs/InGaAs solar cell, which has a short circuit current density of 16.5 mA/cm2, an open circuit voltage of 3141.8 mV, a fill factor of 84.3%, and an efficiency of 32.2%. Then, the IMM3J solar cell is irradiated by 2 MeV protons with different fluences from 2 × 1011 cm−2 to 2 × 1012 cm−2. Finally, the output electrical properties of IMM3J solar cells at the beginning of life and end of life are analyzed by current-voltage characterization. The degradation behaviors of each subcell before and after irradiation can also be described by the external quantum efficiency and short circuit current density.

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Lattice mismatch alleviation in p-CdTe/n-Si heterostructure by surface engineering on Si substrate

Isah,

Doroody,

Rahman

et al. 2023

Heliyon

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Effects of Zn diffusion in tunnel junction and its solution for high efficiency large area flexible GaInP/GaAs/InGaAs tandem solar cell

Cited by 12 publications

References 31 publications

A numerical analysis of ZnTe/AZO as tunnel junction in CdTe/Si tandem solar cell

A numerical analysis of ZnTe/AZO as tunnel junction in CdTe/Si tandem solar cell

Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

Lattice mismatch alleviation in p-CdTe/n-Si heterostructure by surface engineering on Si substrate

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