Influence of vacuum annealing on the physical properties of ZnO/Al/ZnO multilayer coatings

Al‐Maghrabi, M. A.; Al-Kuhaili, M.F.; Durrani, S.M.A.; Bakhtiari, I.A.

doi:10.1116/1.3072512

Cited by 6 publications

(2 citation statements)

References 30 publications

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“…The resistivity of asdeposited by PLD was measured to be 1.68 Â 10 À3 X-cm, but decreased to 9.90 Â 10 À4 X-cm after optimized UVLC (160 mJ/cm 2 , 5 ls) exposure at 500 K. This reveals UVLC coalescences a few small crystals into larger ones and reorganizes the facetted grains into a compact and homogenous film which decreases the internal defects density that influences polycrystalline AZO film conductance. 1,21,24,34 To understand the conductance enhanced by UVLC, Hall mobility, and carrier concentration of AZO films as-deposited and processed by optimized fluence (160 mJ/cm 2 ) with 2.5ls and 5 ls exposure were analyzed. It is found Hall mobility increases from 6.7 to 19.5 and 79 cm 2 /Vs after 2.5 ls and 5 ls exposures.…”

Section: A)mentioning

confidence: 99%

“…20 However, annealing might cause lower conductivity because of the ionization of oxygen vacancies and the oxidation of aluminum. 21 On the other hand, increasing the optical transparency in the red/infrared (IR) range can be achieved by reducing the carrier concentration; however, this is usually results in lower conductivity. 22 Thus, high carrier mobility and low carrier concentration are desired for simultaneously achieving high conductivity and extended IR transparency.…”

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confidence: 99%

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Ultraviolet laser crystallized ZnO:Al films on sapphire with high Hall mobility for simultaneous enhancement of conductivity and transparency

Nian¹,

Zhang²,

Schwartz³

et al. 2014

Applied Physics Letters

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One of the most challenging issues in transparent conductive oxides (TCOs) is to improve their conductivity without compromising transparency. High conductivity in TCO films often comes from a high carrier concentration, which is detrimental to transparency due to free carrier absorption. Here we show that UV laser crystallization (UVLC) of aluminum-doped ZnO (AZO) films prepared by pulsed laser deposition on sapphire results in much higher Hall mobility, allowing relaxation of the constraints of the conductivity/transparency trade-off. X-ray diffraction patterns and morphological characterizations show grain growth and crystallinity enhancement during UVLC, resulting in less film internal imperfections. Optoelectronic measurements show that UVLC dramatically improves the electron mobility, while the carrier concentration decreases which in turn simultaneously increases conductivity and transparency. AZO films under optimized UVLC achieve the highest electron mobility of 79 cm2/V s at a low carrier concentration of 7.9 × 10+19 cm−3. This is realized by a laser crystallization induced decrease of both grain boundary density and electron trap density at grain boundaries. The infrared (IR) to mid-IR range transmittance spectrum shows UVLC significantly enhances the AZO film transparency without compromising conductivity.

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Section: A)mentioning

confidence: 99%

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confidence: 99%