Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

Macco, Bart; Deligiannis, Dimitrios; Smit, Sjoerd; Swaaij, van Racmm René; Zeman, Miro; Kessels, Wmm Erwin

doi:10.1088/0268-1242/29/12/122001

Cited by 45 publications

(38 citation statements)

References 24 publications

(32 reference statements)

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“…Numerical simulations suggested that the τ eff variation at low Δn is caused by the presumed existence of an ultrathin highly defective (recombination-active) layer in-between the a-Si:H(p) layer and ITO [28]. However, although some TCO deposition methods can cause damage to underlying films [31], the described τ eff variations were also observed using ultrasoft deposition techniques such as atomic layer deposition [29], [30], and vanished after TCO removal via chemical etching [27], [30]. Therefore, the most accepted physical interpretation associates this phenomenon rather to the WF of the bare TCO film, being lower than the one of the aSi:H(p) layer.…”

Section: ) Impact Of Doped A-si:h Layersmentioning

confidence: 99%

“…Earlier, it was already established that deposition of TCOs on ip stacks (i.e., hole collectors) can result in additional Δn dependences of the wafer surface passivation [27]- [30], leading to a reduction in τ eff values at low Δn values (Δn < 10 15 cm −3 ). This was reported for a variety of TCOs, including aluminum doped zinc oxide (ZnO:Al) [27], [29], [30] and ITO films [28], [29]. Numerical simulations suggested that the τ eff variation at low Δn is caused by the presumed existence of an ultrathin highly defective (recombination-active) layer in-between the a-Si:H(p) layer and ITO [28].…”

Section: ) Impact Of Doped A-si:h Layersmentioning

confidence: 99%

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Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Tomasi

Sahli

Seif

et al. 2016

IEEE J. Photovoltaics

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Abstract-Charge carrier collection in silicon heterojunction solar cells occurs via intrinsic/doped hydrogenated amorphous silicon layer stacks deposited on the crystalline silicon wafer surfaces. Usually, both the electron and hole collecting stacks are externally capped by an n-type transparent conductive oxide, which is primarily needed for carrier extraction. Earlier, it has been demonstrated that the mere presence of such oxides can affect the carrier recombination in the crystalline silicon absorber. Here, we present a detailed investigation of the impact of this phenomenon on both the electron and hole collecting sides, including its consequences for the operating voltages of silicon heterojunction solar cells. Based on our findings, we define guiding principles for improved passivating contact design for high-efficiency silicon solar cells.

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Section: ) Impact Of Doped A-si:h Layersmentioning

confidence: 99%

Section: ) Impact Of Doped A-si:h Layersmentioning

confidence: 99%

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Tomasi

Sahli

Seif

et al. 2016

IEEE J. Photovoltaics

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“…7,16 Besides achieving such high mobility values, the main advantages of the ALD process are the low temperature processing (post-crystallization can take place at temperatures as low as 150 o C), the ability to conformally deposit on non-planar surfaces, and the fact that plasma-induced damage, typically encountered during sputtering ("sputter damage") 17 , is absent during ALD. 18,19 Despite the importance of the crystallization step in realizing high-mobility In2O3:H, little is known about the crystallization process itself. Therefore, in this contribution, the crystallization process of ALD In2O3:H is studied in detail by electron microscopy to gain a deeper understanding of the physical origin of the very high mobility.…”

Section: Introductionmentioning

confidence: 99%

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

Macco

Verheijen

Black

et al. 2016

Journal of Applied Physics

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Document VersionAccepted manuscript including changes made at the peer-review stage Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTHydrogen-doped indium oxide (In2O3:H) has emerged as a highly transparent and conductive oxide, finding its application in a multitude of optoelectronic devices. Recently, we have reported on an atomic layer deposition (ALD) process to prepare high quality In2O3:H. This process consists of ALD of In2O3:H films at 100 o C, followed by a solid phase crystallization step at 150-200 o C. In this work, we report on a detailed electron microscopy study of this crystallization process which reveals new insights into the crucial aspects for achieving the large grain size and associated excellent properties of the material. The key finding is that the best optoelectronic properties are obtained by preparing the films at the lowest possible temperature prior to post-deposition annealing. Electron microscopy imaging shows that such films are mostly amorphous, but feature a very low density of embedded crystallites. Upon post-deposition annealing, crystallization proceeds merely from isotropic crystal grain growth of these embedded crystallites rather than by the formation of additional crystallites. The

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“…ALD can generate highly conformal ZnO coatings, with competitive electrical and optical properties for relatively thin films (<100 nm). Both Al‐ and B‐doping have been successfully employed for ALD; the Al‐doped process yielded resistivities as low as 7 · 10 −4 Ω · cm for films as thin as 75 nm, and can produce suitable contacts for heterojunction c‐Si/a‐Si solar cells …”

Section: Cvd Processes For (Doped) Zno Layersmentioning

confidence: 99%

“…In some cases, there are very strict requirements for the thickness of the TCO, e.g. in Si‐heterojunction solar cells, the TCO thickness must be maintained at 75 nm for anti‐reflective purposes . In view of these requirements, the ETP‐CVD technique (and indeed, PECVD in general) faces intrinsic challenges due to the frequently observed resistivity gradient: At low film thicknesses, the lateral grain sizes are typically too small, limiting the electron mobility and therefore conductivity.…”

Section: Final Considerations and Conclusionmentioning

confidence: 99%

Expanding Thermal Plasma Deposition of Al‐Doped ZnO: On the Effect of the Plasma Chemistry on Film Growth Mechanisms

Williams

Ponomarev

Verheijen

et al. 2015

Plasma Processes & Polymers

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. À3 V Á cm) at low film thicknesses (<300 nm) as a result of a high grain boundary and void density. Microscopy studies of the early growth stage reveal that a high nucleation probability and strong <0002>-texture are the causes of this microstructure. We investigate how the precursor feed composition (diethylzinc-to-O 2 flow rate ratio) can be utilised to modify the growth mechanism and consequently reduce film resistivity ($10 À4 V Á cm), focussing on the role that this flow rate ratio has on the plasma chemistry developing in the downstream region of the expanding plasma (as supported by Langmuir probe and mass spectrometry measurements).

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Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

Cited by 45 publications

References 24 publications

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

Transparent Electrodes in Silicon Heterojunction Solar Cells: Influence on Contact Passivation

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

Expanding Thermal Plasma Deposition of Al‐Doped ZnO: On the Effect of the Plasma Chemistry on Film Growth Mechanisms

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