Influence of thickness and porous structure of SiC layers on the electrical properties of Pt/SiC-pSi and Pd/SiC-pSi Schottky diodes for gas sensing purposes

Investigation of hydrogen sensing properties and aging effects of Schottky like Pd/porous Si

“…There is two noticeable points: (a) for an ideal diode, the ideality factor (n) should be nearly equal to unity. But in a real situation, it may increase when some effects such as series resistance or leakage current come into play [8]. Thus Pd/porous Si samples obey [9] in Pd-SiO 2 -Si structures, is very low.…”

Chemistry of one dimensional silicon carbide materials: Principle, production, application and future prospects

“…Gas sensors based on porous SiC exhibit improved sensing performances such as relatively rapid response speed [194][195], higher sensitivity [196], good selectivity [197] and long-term stability [198] which have been broadly studied for monitoring harmful exhaust gases produced from industrial processes. Usually, SiC-based gas sensors were constructed as Schottky diodes, field effect transistors or capacitor systems using SiC as a dielectric material [199] and the gas concentrations were determined by measuring variation of electrical current or capacitance when gas molecules were adsorbed on the surface of the active materials.…”

Anodized nanoporous WO3Schottky contact structures for hydrogen and ethanol sensing

“…The gas sensing characteristics of the Schottky diode-based sensor are greatly inuenced by the morphology and porosity of the structures at the contact interface, the contact metal and the semiconducting materials. 31 The reduction of the components' morphologies to nano dimensions can also alter the behavior of the systems. 32 Obviously, the alteration of surface energy, an increase in the surface to volume ratio, adjustments in relation to Debye length and stoichiometry of the semiconducting material are all important factors that affect the characteristics of the Schottky based sensors.…”