Influence of the process parameters on structural and electrical properties of r.f. magnetron sputtering ITO films

Baía, I.; Fernandes, Beatriz Ferreira; Nunes, Patrı́cia; Quintela, M. A. López; Martins, Rodrigo

doi:10.1016/s0040-6090(00)01589-3

Cited by 34 publications

(19 citation statements)

References 4 publications

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“…It is already known that transmittance of the transparent conducting film depends on the concentration of oxygen in the film [19]. Films with greater oxygen concentration will be more transparent because it has higher band gap [19]. In the present case, there is possibility of increase in oxygen content with ion irradiation.…”

Section: Optical Studiesmentioning

confidence: 64%

“…Due to increase in band gap of pristine to irradiated sample up to 3 Â 10 12 ion/cm 2 from 3.5 eV to 3.8 eV causing increase in transmittance and beyond this fluence again band gap decreases to 3.7 eV causing decrease in transmittance again. It is already known that transmittance of the transparent conducting film depends on the concentration of oxygen in the film [19]. Films with greater oxygen concentration will be more transparent because it has higher band gap [19].…”

Section: Optical Studiesmentioning

confidence: 99%

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Study of swift heavy ion irradiation effect on indium tin oxide coated electrode for the dye-sensitized solar cell application

Singh

Agarwal

Chavhan

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Optical Studiesmentioning

confidence: 64%

Section: Optical Studiesmentioning

confidence: 99%

Study of swift heavy ion irradiation effect on indium tin oxide coated electrode for the dye-sensitized solar cell application

Singh

Agarwal

Chavhan

et al. 2010

Nuclear Instruments and Methods in Physics Research Section B:

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“…reported that higher percentage oxygen admixture (more than 10%) during sputtering promotes the growth of (440) peak and reduce the intensity of (400) peaks [9].…”

Section: Resultsmentioning

confidence: 99%

Effects of Deposition Parameters and Oxygen Addition on Properties of Sputtered Indium Tin Oxide Films

Munir¹,

Wibowo²,

Ho³

2013

MST

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Indium tin oxide (ITO) films were sputtered on corning glass substrate. Oxygen admixture and sputtering deposition parameters were optimized to obtain the highest transparency as well as lowest resistivity. Structural, electrical and optical properties of the films were then examined. Increasing deposition rate and film thickness changed the crystallographic orientation from (222) to (400) and (440), as well as higher surface roughness. It was necessary to apply substrate heating during reposition to get films with better crystallinity. The lowest resistivity of 5.36 x 10 -4 Ω•cm was obtained at 750 nm film thickness. The films' resistivity was increased by addition of oxygen up to 2% in the argon sputtering gas. All films showed over 85% transmittance in the visible wavelength range, possible for applications in photovoltaic and display devices. AbstrakEfek Parameter Deposisi dan Penambahan Oksigen terhadap Sifat-sifat Lapisan Tipis Indium Timah Oksida Hasil Sputtering. Lapisan tipis indium timah oksida (ITO) dideposisikan pada substrat gelas corning dengan metode sputtering menggunakan gas argon. Parameter deposisi dan penambahan oksigen dalam gas sputtering dioptimasi untuk mendapatkan tingkat transparansi lapisan tertinggi dan resistivitas listrik terendah melalui pengamatan struktur, sifat listrik dan sifat optik. Peningkatan laju deposisi dan ketebalan lapisan menghasilkan perubahan orientasi kristalografi dari (222) ke (400) dan (440), serta peningkatan kekasaran permukaan lapisan. Pemanasan substrat sangat diperlukan untuk mendapatkan lapisan tipis dengan kristalinitas yang lebih baik. Nilai resistivitas lapisan cenderung naik dengan penambahan oksigen hingga 2% dalam gas sputtering, dengan nilai resistivitas terendah sebesar 5.36 x 10 -4 Ω•cm dapat dicapai pada ketebalan lapisan 750 nm. Semua lapisan tipis yang dideposisi pada penelitian ini menunjukkan transparansi lebih dari 85% sehingga memungkinkan untuk diaplikasikan pada divais fotovoltaik dan display.

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“…SEM and XRD results indicated that laser annealing coupled with the external magnetic field gave rise to gradually increased compactness and grain size of these corresponding films. Since the compactness is conducive to the conductivity of the films [46,47], and larger grain size results in less carrier scattering at grain boundaries and higher carrier mobility [48], the decrease in sheet resistance can thus be explained. The ML-Ni/FTO (1.0 J/cm 2 ) and ML-Ni/FTO (1.1 J/cm 2 ) films possessed a sheet resistance of 5.9 and 10.6 /sq, respectively, higher than that of the ML-Ni/FTO (0.9 J/cm 2 ) film, which should be related to the conglomeration of the particles and removing of the Ni layer in local regions as well as the increase in surface roughness of the films [49] as shown in Fig.…”

Section: Crystal Structurementioning

confidence: 99%

Improving the performance of nickel-coated fluorine-doped tin oxide thin films by magnetic-field-assisted laser annealing

Huang

Kong³

et al. 2015

Applied Surface Science

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Influence of the process parameters on structural and electrical properties of r.f. magnetron sputtering ITO films

Cited by 34 publications

References 4 publications

Study of swift heavy ion irradiation effect on indium tin oxide coated electrode for the dye-sensitized solar cell application

Study of swift heavy ion irradiation effect on indium tin oxide coated electrode for the dye-sensitized solar cell application

Effects of Deposition Parameters and Oxygen Addition on Properties of Sputtered Indium Tin Oxide Films

Improving the performance of nickel-coated fluorine-doped tin oxide thin films by magnetic-field-assisted laser annealing

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