Influence of substrates on the electrical properties of Cu(In,Ga)Se/sub 2/ thin films

Ruckh, H.; Schmid, D. O.; Kaiser, M.; Schäffler, R.; Walter, T.; Schock, Hans‐Werner

doi:10.1109/wcpec.1994.519831

Cited by 58 publications

(59 citation statements)

References 3 publications

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“…Generally, Na in CIGS improves the cell efficiency by increasing the V OC and fill factor. 97,99,100 The optimum Na dose is often considered to be equal to the amount diffusing from a soda-lime glass substrate, resulting in a typical Na concentration of approximately 0Á1 at.%.…”

Section: Sodium Incorporation In Cigsmentioning

confidence: 99%

“…109 In several reports, 99,101 a change in texture of CIGS films towards (112) orientation has been attributed to Na and supported by theoretical considerations for the case of high Na concentrations, 110 but remains disputed, owing to contrary results. 100,104,106,107 Higher doses of Na are shown to lead to small grain sizes and porous films and to be detrimental to the cell performance. 104,105 The most obvious electronic effect of Na incorporation into CIGS films is a decrease in resistivity by up to two orders of magnitude.…”

Section: Sodium Incorporation In Cigsmentioning

confidence: 99%

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Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

354

192

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Cu(In,Ga)Se2 and CdTe heterojunction solar cells grown on rigid (glass) or flexible foil substrates require p‐type absorber layers of optimum optoelectronic properties and n‐type wide‐bandgap partner layers to form the p–n junction. Transparent conducting oxide and specific metal layers are used for front and back electrical contacts. Efficiencies of solar cells depend on various deposition methods as they control the optoelectronic properties of the layers and interfaces. Certain treatments, such as addition of Na in Cu(In,Ga)Se2 and CdCl2 treatment of CdTe have a direct influence on the electronic properties of the absorber layers and efficiency of solar cells. Processes for the development of superstrate and substrate solar cells are reviewed. Copyright © 2004 John Wiley & Sons, Ltd.

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Section: Sodium Incorporation In Cigsmentioning

confidence: 99%

Section: Sodium Incorporation In Cigsmentioning

confidence: 99%

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Romeo¹,

Terheggen²,

Abou‐Ras³

et al. 2004

Progress in Photovoltaics

354

192

View full text Add to dashboard Cite

show abstract

“…[2][3][4][5][6][7][8] Swiss Federal Laboratories for Materials Science and Technology (EMPA) and ZSW fabricated high-efficiency CIGSe solar cells by the evaporation process with the post deposition of alkali-metal fluorides, such as NaF, KF, and RbF. EMPA 9) and ZSW 10) fabricated high-efficiency CIGSe solar cells by the post deposition of NaF and KF and annealing in an Se atmosphere.…”

Section: Introductionmentioning

confidence: 99%

“…EMPA 9) and ZSW 10) fabricated high-efficiency CIGSe solar cells by the post deposition of NaF and KF and annealing in an Se atmosphere. Recently, Solar Frontier announced the highest efficiency of Cu(In,Ga)(S,Se) 2 (CIGSSe) solar cell with an efficiency of 22.9% by the post deposition treatment of CsF. 11,12) EMPA reported formation of a Cu-deficient layer at the surface of the CIGSe layer after the post deposition treatment and annealing.…”

Section: Introductionmentioning

confidence: 99%

Crystallographic, optical, and electronic properties of Li-doped CuIn(S,Se)₂, (Cu,Li)In(S,Se)₂

Kusumoto

Maeda

Wada

2018

Jpn. J. Appl. Phys.

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(Cu 1%x Li x )In(S 1%y Se y ) 2 (CLISSe) samples with 0.0 : x : 0.4 and y = 0.25, 0.50, and 0.75 were prepared by a mechanochemical process and sequential heating. The X-ray diffraction (XRD) peaks of the (Cu 1%x Li x )In(S 1%y Se y ) 2 shifted to the lower angle side by the substitution of Li atoms for Cu atoms. The solid solution limit of Li for Cu in (Cu 1%x Li x )In(S 1%y Se y ) 2 system widened with increasing Se content, y. The single-phase (Cu 1%x Li x )In(S 1%y Se y ) 2 samples were obtained for the compositions with 0.0 : x : 0.05 for y = 0.25, 0.0 : x : 0.20 for y = 0.50, and 0.0 : x : 0.30 for y = 0.75. The crystallographic parameters such as the lattice constants a and c, c/a, and the atomic coordinate of a S/Se atom for (Cu 1%x Li x )In(S 1%y Se y ) 2 were refined by Rietveld analysis using XRD data. Both the lattice constants a and c of the (Cu 1%x Li x )In(S 1%y Se y ) 2 with a tetragonal chalcopyrite structure increased with increasing Li content, x. The band gaps of (Cu 1%x Li x )In(S 1%y Se y ) 2 solid solutions widened with increasing Li content, x. To understand the band diagram of the solid solutions, the energy level of the valence band maximum (VBM) from the vacuum level was determined from the ionization energy measured by photoemission yield spectroscopy (PYS). The energy level of the conduction band minimum (CBM) was also determined by adding the band-gap energy to the VBM level. The VBM level of the (Cu 1%x Li x )In(S 0.25 Se 0.75 ) 2 solid solution decreased considerably with increasing Li content, x. The CBM level of the (Cu 1%x Li x )In(S 1%y Se y ) 2 solid solution was approximately constant. The Li doping in CuIn(S,Se) 2 is useful for decreasing the VBM of the CuIn(S,Se) 2 absorber and increasing the band-gap energy of the CuIn(S,Se) 2 absorber without increasing the CBM level.

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“…Still others have found that Na increases the open-circuit voltage of polycrystalline devices and reduces depletion width. [13] The suggested explanation in this case was that Na acted to increase effective hole concentration by neutralizing donor Se vacancies through an enhanced chemisorption of oxygen in the presence of Na. Na has also been linked to the appearance of an acceptor state 75 meV above the valence band in device layers.…”

Section: Iid the Effect Of Na On Cu(in 1-x Ga X )Sementioning

confidence: 97%

Fundamental studies of the effect of crystal defects on CuInSe{sub 2}/CdS heterojunction behavior: Final report, 28 June 1993--30 June 1998

Rockett¹

1999

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Influence of substrates on the electrical properties of Cu(In,Ga)Se/sub 2/ thin films

Cited by 58 publications

References 3 publications

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Crystallographic, optical, and electronic properties of Li-doped CuIn(S,Se)₂, (Cu,Li)In(S,Se)₂

Fundamental studies of the effect of crystal defects on CuInSe{sub 2}/CdS heterojunction behavior: Final report, 28 June 1993--30 June 1998

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Influence of substrates on the electrical properties of Cu(In,Ga)Se/sub 2/ thin films

Cited by 58 publications

References 3 publications

Development of thin‐film Cu(In,Ga)Se2 and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se2 and CdTe solar cells

Crystallographic, optical, and electronic properties of Li-doped CuIn(S,Se)2, (Cu,Li)In(S,Se)2

Fundamental studies of the effect of crystal defects on CuInSe{sub 2}/CdS heterojunction behavior: Final report, 28 June 1993--30 June 1998

Contact Info

Product

Resources

About

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Development of thin‐film Cu(In,Ga)Se₂ and CdTe solar cells

Crystallographic, optical, and electronic properties of Li-doped CuIn(S,Se)₂, (Cu,Li)In(S,Se)₂