Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

Abstract

The paper considers the influence of a transition amorphous layer at the interface between the higher manganese silicide (HMS) Mn 4 Si 7 and silicon doped with manganese (Si <Mn>) on the photoelectric properties of heterostructures. The role of the initial structural defects in the near-surface layers of the single-crystal silicon on the penetration of manganese atoms into Si upon doping from the gas phase is shown.It has been established that at high temperatures (T>1050 • C) Mn atoms deposited on the silicon surface group together (due to surface diffusion), forming droplets of liquid manganese, which dissolve the near-surface silicon layer, forming a liquid solution-a melt of Mnand Si. When Mn atoms transfer from the vapor phase into the liquid solution-melt and Si atoms diffuse into it from the boundary regions, including the amorphous bulk Si layer, the solution-melt increases in size and solidifies. During solidification, higher manganese silicide (HMS) Mn 4 Si 7 is formed, and under silicide, due to intense diffusion of Si atoms, the Si-Si bonds break, and an amorphous and elastically deformed Si region is formed, which predetermines the evolution of photoelectric phenomena in heterostructures

Obtaining higher manganese silicide films with high thermoelectric properties

“…Among such materials, a film of higher manganese silicide is the most promising. (HSM), the thermoelectric figure of merit can reach 0.4 in the temperature range of 20 -700°C [11][12][13][14][15][16].…”