Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films

Kar, Jyoti Prakash; Kim, Sung-Yeon; Shin, Beom Ki; Park, K.I.; Ahn, Kyung-Jun; Lee, W.; Cho, J.H.; Myoung, Jae‐Min

doi:10.1016/j.sse.2010.07.002

Cited by 63 publications

(20 citation statements)

References 27 publications

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“…Extensive research was performed in order to replace the indium tin oxide (ITO) with an alternative material based on earth abundant low cost elements. In the "next generation" category of low cost TCO the doped ZnO [2] and SnO 2 [3] are studied. The doping of ZnO thin films with trivalent metal ions, such as Al, In and Ga respectively, is used in order to enhanced the optical and electrical properties of the films [2,4,5].…”

Section: Introductionmentioning

confidence: 99%

Optical and electrical studies of transparent conductive AZO and ITO sputtered thin films for CIGS photovoltaics

Mereu

Marchionna²,

Donne

et al. 2014

Phys. Status Solidi C

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Due to the many advantages of aluminum doped zinc oxide (AZO) as an alternative to indium tin oxide (ITO), the optical and electrical properties of AZO thin films deposited on large substrates by D.C. pulsed magnetron sputtering have been investigated in view of future industrial applications. In order to evaluate the effectiveness of AZO thin films as transparent conductive oxide (TCO), their properties have been compared with those of standard ITO grown with the same technique. The effect of the thickness on the optical properties revealed higher transmittance values for AZO (T>86%) than for ITO (T>83%) films. The best resistivity values obtained for AZO were about 9.7×10–4 Ωcm versus 5.09×10–4 Ωcm measured for ITO films. Moreover, it was observed that the film resistivity is significantly influenced by the working pressure in the case of AZO films while the ITO resistivity appears almost unaffected. Finally, since both the optical and electrical properties are influenced by the film thickness, it was crucial to determine the proper AZO thickness in order to obtain the optimum of electrical and optical properties for the photovoltaic applications. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 99%

Optical and electrical studies of transparent conductive AZO and ITO sputtered thin films for CIGS photovoltaics

Mereu

Marchionna²,

Donne

et al. 2014

Phys. Status Solidi C

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“…1c). 25,26 Shown in Fig. 1d is the doping mechanism where the Al 3+ ion occupies an interstitial octahedrally coordinated site.…”

Section: Introductionmentioning

confidence: 99%

Relation between synthesis conditions, dopant position and charge carriers in aluminium-doped ZnO nanoparticles

et al. 2013

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“…Particularly, aluminum-doped zinc oxide (AZO) is a promising alternative material to indium tin oxide as a TCO because it offers many advantages of low cost, thermal stability, and non-toxicity [3,4]. Meanwhile, antireflection coatings (ARCs) play an important role in enhancing the light trapping by suppressing the undesirable Fresnel surface reflection loss at the interface between the top layer and air in solar cells [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Biomimetic parabola-shaped AZO subwavelength grating structures for efficient antireflection of Si-based solar cells

Leem

Joo

2011

Solar Energy Materials and Solar Cells

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Influence of sputtering pressure on morphological, mechanical and electrical properties of Al-doped ZnO films

Cited by 63 publications

References 27 publications

Optical and electrical studies of transparent conductive AZO and ITO sputtered thin films for CIGS photovoltaics

Optical and electrical studies of transparent conductive AZO and ITO sputtered thin films for CIGS photovoltaics

Relation between synthesis conditions, dopant position and charge carriers in aluminium-doped ZnO nanoparticles

Biomimetic parabola-shaped AZO subwavelength grating structures for efficient antireflection of Si-based solar cells

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