Influence of spin-orbit scattering on the magnetoresistance due to enhanced electron-electron interactions

Sahnoune, A.; Ström‐Olsen, J. O.; Fischer, Henry E.

doi:10.1103/physrevb.46.10035

Cited by 31 publications

(21 citation statements)

References 19 publications

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“…Our final formula (60)) can be used for the explanation of experimental results for the resistivity of amorphous alloys of simple metals with a heavy metal component where the spin -orbit scattering is important. Sahnoune et al [13] published their results of measurements of the resistivity for a series of amorphous alloys Ca 70 Al 30-x Au x which belong to this category, and explained them in terms of the Fukuyama and Hoshino theory [16]. We think that this theory is not suitable for this class of alloys because its range of validity is supposed to be when F 1 k l which is not the case for these alloys and is one the reasons for our work.…”

Section: Discussionmentioning

confidence: 84%

“…The extension to a more than one-component system is straightforward but further complicates an already elaborate theory. The role of spin -orbit interaction increases rapidly with the atomic number [24] and therefore this effect was clearly observed many years ago in metals where electrons are scattered by heavy ions placed in a matrix of lighter ones [13] or on the surface of thin films [25]. This is important effect in the context of QI effects or '2 ' F k -scattering [25,26] where multiple scattering of electrons inhibits the diffusion of electrons which leads to the alternative expression [27,28], namely a weak localization corrections to the usual Boltzmann equation description of conduction processes [29].…”

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confidence: 99%

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Influence of spin–orbit interaction on the electrical conductivity of three‐dimensional disordered systems

Spisak

Paja

Morgan

2005

Physica Status Solidi (b)

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A calculation of the effects of spin -orbit interaction on electron transport in 3D disordered systems is presented. We use the Wigner density matrix to construct self-consistent transport equations which can be used to discuss weak localization (quantum interference) effects and even strong localization. The formula for the transport relaxation time has been obtained. The change of the resistivity due to spin-orbit interaction is negative in agreement with experiment.

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Section: Discussionmentioning

confidence: 84%

mentioning

confidence: 99%

Influence of spin–orbit interaction on the electrical conductivity of three‐dimensional disordered systems

Spisak

Paja

Morgan

2005

Physica Status Solidi (b)

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“…The data are for a series of amorphous Ca-AI alloys where the spin-orbit interaction was varied by adding small amounts of silver or gold. The results show that the EEI contribution to the mag netoresistance vanishes at large spin-orbit scattering rates [9], The figure shows that an AI63Cu25Fe12 quasicrystal of a high degree of perfection exhibits a huge magnetoresistance Ap/p compared with the effects observed in amorphous metals. It is about a factor 30 larger than for amorphous Cu-La (see page 102, Fig.…”

Section: The State-of-the-artmentioning

confidence: 77%

Anomalous Transport in High Resistivity Metallic Glasses

Rapp¹

1993

Europhys. News

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Careful measurements using metallic glasses permit the testing of theories for the anomalous transport properties of disordered systems, notably those involving quantum effects.Low-temperature transport properties per haps demonstrate the most interesting of all the anomalous features found in amorphous metallic alloys because they represent ma croscopic quantum phenomena with a rich variety of behaviours. For example, the electrical resistivity at low temperatures of some metallic glasses shows different tem perature dependences (Fig. 1) originating from quantum effects. The magnetoresis tance   (B)/ -the dependence of the electrical resistivity p on the magnetic field B -is also anomalous at low temperatures. For instance, the magnetoresistance at 4.2 K is seen in Fig. 2 to be positive for Cu-La and negative for Cu-Mg.The anomalies in electrical resistivity, magnetoresistivity and other transport pro perties of disordered materials arise since the electron mean path (the distance bet ween electron collision events) becomes very short in disordered materials, of the order of the distance between atoms. In this situation, classical transport theories are no longer valid. The electrons cannot be descri bed as Independent particles and quantum corrections to the transport properties must be considered. These effects are of two types: weak localization (WL) and electronelectron interaction (EEI).Before discussing the status of ap proaches for describing quantum correc tions to the transport properties of metallic glasses at low temperatures, it is useful to briefly review the full range of anomalous properties. Electrical ResistivityThe electrical properties of amorphous metals have in fact offered repeated sur prises for more than 15 years. Although the temperature coefficient of resistance for a resistive metallic glass (an amorphous metallic alloy with unfilled d-bands having a high electrical resistance) is small, often a few times 10-4, the more physically interest ing quantity, namely the magnitude of the temperature T dependence of the electrical resistivity dp/dT is, in contrast, often large (roughly five times larger than that of copper at room temperature for typical resistivities of amorphous metals of about 200 µ cm). Moreover, the coefficient is negative from helium temperatures up to several hundreds of degrees centigrade, where relaxation effects and/or crystallization of the glass sets in. This unusual temperature depen dence is the oldest reported anomaly in the electrical properties of amorphous metals. Östen Hall EffectAnother controversial aspect of the trans port properties of metallic glasses concerns the Hall effect (the creation of a voltage per pendicular to the direction of current flow when the sample is placed in a magnetic field). Electronic properties are expected to be isotropic in amorphous alloys so the Fermi surface would be spherical, albeit somewhat blurred, and the Hall coefficient should be negative. Both are observed and often quantitatively well accounted for in simple ...

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“…It is not surprising because the prefactor in the expression on the right hand side of Eq. (44) is of the order of (vF /c) 4 1 0 -$ . I t i s m o r e r e a l i s t i c a p p r o a c h b e c a u s e t h e c h a r g e carriers actually move through a disordered system of potentials, not in vacuum, but the discrepancies between the experimental data for the resistivity of alkali metals and the values obtained from the Faber-Ziman theory (see e.g.…”

Section: Now We Can Calculate the Ratiomentioning

confidence: 99%

“…Many authors consider the inverse spin-orbit relaxation time τSO -1 w h i c h measures the strength of the spin-orbit coupling but they introduce τ in a phenomenological way and estimate its value by fitting the theoretical formulae to the experimental curves for the resistivity or conductivity (see e.g. [4][5][6][7]). However, the modification of the inverse relaxation time 7.-1 due to the spin-orbit scattering can be calculated from the quantum theory of scattering.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Spin-Orbit Scattering on the Electrical Resistivity of Disordered Materials

Spisak

Paja

1999

Acta Phys. Pol. A

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Influence of spin-orbit scattering on the magnetoresistance due to enhanced electron-electron interactions

Cited by 31 publications

References 19 publications

Influence of spin–orbit interaction on the electrical conductivity of three‐dimensional disordered systems

Influence of spin–orbit interaction on the electrical conductivity of three‐dimensional disordered systems

Anomalous Transport in High Resistivity Metallic Glasses

The Effect of Spin-Orbit Scattering on the Electrical Resistivity of Disordered Materials

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