Influence of spin–orbit interaction on the electrical conductivity of three‐dimensional disordered systems

Spisak, B. J.; Paja, A.; Morgan, G J

doi:10.1002/pssb.200440024

Cited by 8 publications

(7 citation statements)

References 53 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…32 Several research ndings revealed that MR can have negative values as well. 26,33 In disordered systems, spin-orbit interaction plays inuential role in governing the sign of MR. [34][35][36] Interplay between magnetism and electrical properties was explored in BaTiO 3 -SrFe 12 O 19 nanocomposites. 37 Positive and negative MD effect depending on frequency and temperature was observed in these nanocomposites which may be attributed to the induced internal magnetic eld and space charge/interfacial polarization respectively.…”

Section: Introductionmentioning

confidence: 99%

Crossover of positive and negative magnetoconductance in composites of nanosilica glass containing dual transition metal oxides

et al. 2021

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Crossover of positive and negative magnetoconductance in composites of nanosilica glass containing dual transition metal oxides

et al. 2021

View full text Add to dashboard Cite

show abstract

“…1). We describe the transport properties of the nanostructure in the framework of the two-current model using the spin-dependent Wigner distribution function (WDF) [4]. Taking the z axis along the growth direction and assuming the translational invariance in the lateral directions (x, y), the quantum transport equation for the spin-dependent WDF can be effectively reduced to the one-dimensional form [5]:…”

Section: Model Of Nanodevice and Methods Of Calculationsmentioning

confidence: 99%

Simulation of Spin-Dependent Electronic Transport through Resonant Tunnelling Diode with Paramagnetic Quantum Well

et al. 2011

View full text Add to dashboard Cite

The spin-dependent electronic transport is investigated in a paramagnetic resonant tunnelling diode formed from Zn 1−x Mn x Se quantum well between two ZnBeSe barrier layers. The spin-dependent current-voltage characteristics have been obtained in the presence of magnetic fields by solving the quantum kinetic equation for the Wigner distribution function and the Poisson equation in the self-consistent procedure. We have obtained two distinct current peaks due to the giant Zeeman splitting of electronic levels in a qualitative agreement with experiment. We have shown that the sign of spin current polarization can be reversed by tuning the bias voltage. Moreover, we have found the bias voltage windows with a nearly constant polarization.

show abstract

“…In order to simulate the electronic transport through the nanostructure, we apply the time-dependent Wigner-Poisson approach, according to which the conduction band electrons are described by the spin-dependent Wigner distribution function. [39][40][41] The quantum kinetic equation takes on the following form 39…”

Section: Theoretical Modelmentioning

confidence: 99%

Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode

et al. 2012

Self Cite

View full text Add to dashboard Cite

A spin-and time-dependent electron transport has been studied in a paramagnetic resonant tunneling diode using the self-consistent Wigner-Poisson method. Based on the calculated currentvoltage characteristics in an external magnetic field we have demonstrated that under a constant bias both the spin-up and spin-down current components exhibit the THz oscillations in two different bias voltage regimes. We have shown that the oscillations of the spin-up (down) polarized current result from the coupling between the two resonance states: one localized in the triangular quantum well created in the emitter region and the second localized in the main quantum well. We have also elaborated the one-electron model of the current oscillations, which confirms the results obtained with the Wigner-Poisson method. The spin current oscillations can lower the effectiveness of spin filters based on the paramagnetic resonant tunneling structures and can be used to design the generators of the spin polarized current THz oscillations that can operate under the steady bias and constant magnetic field. a

show abstract

Influence of spin–orbit interaction on the electrical conductivity of three‐dimensional disordered systems

Cited by 8 publications

References 53 publications

Crossover of positive and negative magnetoconductance in composites of nanosilica glass containing dual transition metal oxides

Crossover of positive and negative magnetoconductance in composites of nanosilica glass containing dual transition metal oxides

Simulation of Spin-Dependent Electronic Transport through Resonant Tunnelling Diode with Paramagnetic Quantum Well

Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode

Contact Info

Product

Resources

About