The Effect of Spin-Orbit Scattering on the Electrical Resistivity of Disordered Materials

Abstract

The spin-orbit scattering of charge carriers is considered as an additional contribution to the potential scattering. The expressions for the effective cross-section and the relaxation time for disordered media are calculated. The results for the Coulomb screened potential are presented and compared with available experimental data.

Transport Relaxation Time of Spin-Polarized Electrons

“…In our previous paper [4] we used the structure factor which took into account the correlations between positions of ions according to the random close packed hard spheres model. In this work we assume randomly distributed isolated metal impurities which therefore are totally uncorrelated (i.e.…”

“…One of the simple realizations of this task is the introduction of the structure factor [10] to the scattering rate as it was presented in Ref. [4]. In the considered case, we assume the delta-like structure factor and therefore the impurities are treated as independent ones.…”

“…The transport of unpolarized electrons in 3D disordered metallic systems was treated in our previous paper [4]. Grimaldi [5] calculated the transport properties of 2D electron gas polarized in-plane by a magnetic field.…”