Influence of short-term annealing on the conductivity of porous silicon and the transition resistivity of an aluminum-porous silicon contact

Stable aluminium ohmic contact to surface modified porous silicon

“…Fig. 6 clearly shows that Al contact to unmodified PS is Schottky by nature that is also supported by the literature [8][9][10]14] and the contact is ohmic after Pd surface modification. The J-V measurements were also conducted with Au contact under the identical condition to verify that Au gives rectifying contact, as expected, even after Pd modification.…”

“…From EDAX and XPS results it is verified that the presence of oxygen is higher in modified PS. Al contact to modified porous silicon appears to be low resistive ohmic contrary to the nonlinear nature reported with Al contact on unmodified porous silicon surface [8,14]. The specific contact resistance of Al contact to the modified PS layer was studied using the TLM method.…”

“…Zimin and Komarov [14] made an attempt to measure the so-called ''Transition resistivity" of the unmodified PS surfaces (16-40% porosity) prepared from low resistive (0.03 X cm) p-type silicon wafers. They reported the values of transition resistivity for Al contact on unmodified porous silicon by brazing at 300°C in nitrogen for 10 min and it varied between 0.6 and 1.3 K X cm 2 .…”

Chemical surface modification of porous silicon with palladium and characterizations

“…So the Al contact to PS becomes rectifying Schottky junction in nature [18][19][20][21] and the stability of the material is disturbed (Figs. 7a and 8a).…”

The Mechanism of Metal-Assisted Etching of Silicon

“…However, the ohmic and rectifying nature depend on some properties of PSi like type of conductivity, porosity, and resistivity. For example, it was found that while PSi with low porosity and low resistivity forms ohmic contact with Al, both n-and p-type PSi with high resistivity forms Al-PSi contact of rectifying behavior (Simons et al 1995;Zimin et al 1995Zimin et al , 1998Kanungo et al 2009a). There are reports on the ohmic behavior of Al to PSi after the surface modification, presumably due to the reduction of the porosity through surface passivation (Kanungo et al 2009a;Maji et al 2010).…”