Influence of secondary-electron emission from MgO surfaces on voltage-breakdown curves in Penning mixtures for insulated-electrode discharges

Aboelfotoh, M. O.; Lorenzen, J.

doi:10.1063/1.323490

Cited by 95 publications

(53 citation statements)

References 21 publications

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“…20,28 The information on the DOS of the valence band of MgO could be obtained from the energy distribution of the abnormal electrons, confirming that the present approach is effective for characterizing MgO films as a protective layer in PDPs.…”

Section: Discussionsupporting

confidence: 66%

Abnormal electron emission from MgO thin film under ion irradiation

Tsujita

Nagatomi

Takai

2005

Surface & Interface Analysis

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Energy distributions of secondary electrons from an MgO thin-film surface under ion irradiation were investigated. The abnormal ion-induced secondary electron emission was observed in addition to the normal emission. The abnormal emission observed in the present study is found to be a kind of selfsustained emission because it continued after stopping ion irradiation. The energies of the abnormal secondary electrons are lower than the vacuum level at the MgO surface by ∼7-10 eV and its energy distribution is close to the profile of the density-of-states of the valence band of MgO. The results strongly suggested that the abnormal electron emission observed in the present study is due to field emission of the valence electrons of MgO through a mechanism other than the Malter effects or the Townsend Avalanche effect.

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Section: Discussionsupporting

confidence: 66%

Abnormal electron emission from MgO thin film under ion irradiation

Tsujita

Nagatomi

Takai

2005

Surface & Interface Analysis

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“…When the released energy of Ei-χ-E g S is transferred to another valence electron, and the energy of the excited electron exceeds the vacuum level, the electron escapes from the surface as a secondary electron, with typical E g S and electron affinity χ values of 6.3 and 0.85-1.0 eV, respectively. 29 In the case of Xe+ irradiation onto a defect-free MgO surface (Fig. 6(a)), because the difference between the energies of a valence electron in the MgO and the ionized shell in an Xe+ ion is lower than that required for secondary electron emission, the secondary electron will not be emitted at all.…”

Section: Resultsmentioning

confidence: 99%

Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

et al. 2015

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The band gap and defect states of MgO thin films were investigated by using reflection electron energy loss spectroscopy (REELS) and high-energy resolution REELS (HR-REELS). HR-REELS with a primary electron energy of 0.3 keV revealed that the surface F center (FS) energy was located at approximately 4.2 eV above the valence band maximum (VBM) and the surface band gap width (E g S ) was approximately 6.3 eV. The bulk F center (F B ) energy was located approximately 4.9 eV above the VBM and the bulk band gap width was about 7.8 eV, when measured by REELS with 3 keV primary electrons. From a first-principles calculation, we confirmed that the 4.2 eV and 4.9 eV peaks were F S and F B , induced by oxygen vacancies. We also experimentally demonstrated that the HR-REELS peak height increases with increasing number of oxygen vacancies. Finally, we calculated the secondary electron emission yields (γ) for various noble gases. He and Ne were not influenced by the defect states owing to their higher ionization energies, but Ar, Kr, and Xe exhibited a stronger dependence on the defect states owing to their small ionization energies. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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“…In addition, it has been reported that defects in the films could trap the excited secondary electrons leading to a decrease of the amount of the secondary electrons escaping from film surface and therefore to decrease of d. Cheng et al [149] reported that the d coefficient increases with increasing E/P, where E is the applied field and P is the pressure between the cells. This increase was judged by the photoemission and kinetic ejection mechanisms for SEE from a surface [193][194][195].…”

Section: Secondary Electron Emission Yieldmentioning

confidence: 99%