Atomic layer deposition (ALD) was used to fabricate magnesium phosphate thin films as a magnesium-ion conducting solid electrolyte. The deposition was carried out at lower deposition temperatures, ranging from 125 to 300 °C. The film exhibits an amorphous nature and excellent step coverage, even in narrow trenches with a higher aspect ratio. The growth rate and the ionic conductivity were found to increase with a decrease of the deposition temperature. This can be explained by increased disordering of the phosphate matrix, giving rise to enhanced hopping conduction of magnesium ions. The film deposited at 125 °C showed an ionic conductivity of 1.6 × 10–7 S cm–1 at an ambient temperature of 500 °C, with an activation energy of 1.37 eV. These values are better than those of the film deposited at 250 °C as well as of a sputtered film. Our results indicate that ALD has great potential for the fabrication of magnesium-based solid electrolyte films.

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We investigated the electron-phonon coupling (EPC), in the vicinity of the Fermi level, for the surface-weighted states of Mo(112) from high resolution angle-resolved photoemission data taken parallel to the surface corrugation (i.e. 11 1 ). The surface-weighted bandwidth may be discussed in terms of electron-electron interactions, electron impurity scattering and electron-phonon coupling and exhibits a mass enhancement factor λ = 0.42, within the Debye model, determined from the experimentally derived self-energy. Gold overlayers suppress the mass enhancement of the Mo(112) surface-weighted band crossing the Fermi level at 0.54Å −1 .

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Low-energy electron diffraction (LEED) was used to investigate the atomic structure of an Sc-O/W(100) surface acting as a Schottky emitter in order to elucidate a marked reduction in the work function of the Sc-O/W(100) Schottky emitter surface. The results of our LEED observation of the Sc-O/W(100) surface at room temperature revealed that a p(2 × 1) and p(1 × 2) double-domain structure is formed on the surface. This reconstructed structure exhibited no changes when heated to 1400 K, and continued to remain stable even when held at 1400 K. These results strongly suggest that the p(2 × 1) and p(1 × 2) double-domain structure is formed by scandium-oxygen electric dipoles on the W(100) surface, leading to a marked reduction in the work function of the Sc-O/W(100) surface at the operating temperature of the Sc-O/W(100) Schottky emitter.

Solid‐state batteries (SSBs) that use solid electrolytes instead of flammable liquid electrolytes have the potential to generate higher specific capacity and offer better safety. Magnesium (Mg) based SSBs with Mg metal anodes are considered to be one of the most promising energy storage candidates, because it gives high theoretical volumetric capacities of 3830 mAh cm−3. Here, we demonstrate an atomic layer deposition (ALD) process with a double nitrogen plasma process that successfully produces nitrogen‐incorporated magnesium phosphorus oxynitride (MgPON) solid‐state electrolyte (SSE) thin films at a low deposition temperature of 125 °C. The ALD MgPON SSEs exhibit an ionic conductivity of 0.36 and 1.2 μS cm−1 at 450 and 500 °C, respectively. The proposed ALD strategy shows the ability of conformal deposition nitrogen‐doped SSEs on pattered substrates and is attractive for using nitride ion‐conducing films as protective or wetting interlayers in solid‐state Mg and Li batteries.