Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

Jolley, Greg; Fu, Lan; Tan, H. H.; Jagadish, Chennupati

doi:10.1063/1.2802559

Cited by 19 publications

(9 citation statements)

References 12 publications

(8 reference statements)

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“…Compositions of AlGaAs are closely lattice-matched to GaAs, whereas InGaAs (particularly compositions with high indium contents) may not necessarily have the same trait. This trait is of particular significance when changing to a lower quality growth method, such as from MBE to MOCVD, as the larger mismatch can lead to high densities of defects [259,260]. …”

Section: Quantum Dots-in-a-well Photodetectors (Dwell-ips)mentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

223

110

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The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

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Section: Quantum Dots-in-a-well Photodetectors (Dwell-ips)mentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

223

110

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“…[1][2][3][4][5] Compared with conventional quantum-well infrared photodetectors, QDIPs provide the advantages of long carrier capture and relaxation times, 6 no polarization selection rule for normal incidence light and high-temperature operation. [1][2][3][4][5] Compared with conventional quantum-well infrared photodetectors, QDIPs provide the advantages of long carrier capture and relaxation times, 6 no polarization selection rule for normal incidence light and high-temperature operation.…”

Section: Introductionmentioning

confidence: 99%

The transition mechanisms of a ten-period InAs∕GaAs quantum-dot infrared photodetector

Tseng

Chou

Lin

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEffect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors This study explores the growth and effects of a ten-period InAs/ GaAs quantum-dot infrared photodetector ͑QDIP͒. With a uniform quantum-dot ͑QD͒ size distribution and a QD density of 2.8ϫ 10 10 cm −2 , this 10 K photoluminescence spectrum shows a peak energy at 1.07 eV and a narrow full width at half maximum of 31.7 meV. The QDIP exhibits an asymmetric response under different voltage polarities and a high responsivity of 1.7 A / W at −1.1 V. Another noticeable observation in the spectral response of the device is the 6 m peak detection wavelength with a high spectral broadening ⌬ / of 0.67. By analyses of the photoluminescence excitation spectrum and the temperature dependence of spectral response, the wide spectral response of the QDIP is attributed to the summation of transitions between QD excited states and the wetting layer states, instead of transitions between QD ground state and higher excited states.

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“…Other properties of DWELL photodetectors, such as generation of the photocurrent, the bias dependence of the photoresponse, and variation of the composition of DWELL system, were also studied both theoretically and experimentally. [35][36][37][38][39] In the present paper the conduction band mass of In 0.15 Ga 0.85 As, InAs and GaAs were taken from Ref. 40.…”

Section: Resultsmentioning

confidence: 99%

Theoretical study of intraband optical transitions in conduction band of dot-in-a-well system

Chaganti

Apalkov

2014

AIP Advances

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Articles you may be interested inObservation of room temperature optical absorption in InP/GaAs type-II ultrathin quantum wells and quantum dots Theoretical modeling and experimental characterization of InAs ∕ InGaAs quantum dots in a well detectorWe study numerically absorption optical spectra of n-doped InAs/In 015 Ga 085 As/ GaAs quantum dot-in-a-well systems. The absorption spectra are mainly determined by the size of a quantum dot and have weak dependence on the thickness of quantum well and position of the dot in a well. The dot-in-a-well system is sensitive to both in-plane and out-of-plane polarizations of the incident light with much stronger absorption intensities for the in-plane-polarized light. The absorption spectrum of in-plane-polarized light has also a multi-peak structure with two or three peaks of comparable intensities, while the absorption spectrum of out-of-plane polarized light

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Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

Cited by 19 publications

References 12 publications

Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

The transition mechanisms of a ten-period InAs∕GaAs quantum-dot infrared photodetector

Theoretical study of intraband optical transitions in conduction band of dot-in-a-well system

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