Influence of position-dependent effective mass on third-order nonlinear optical susceptibility of impurity doped quantum dots in the presence of Gaussian white noise

Saha, Surajit; Pal, Suvajit; Ganguly, Jayanta; Ghosh, Manas

doi:10.1016/j.physb.2015.12.047

Cited by 13 publications

(6 citation statements)

References 53 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…where β is a constant chosen to be 0.01 a.u. V noise stands for white noise [f(x,y)] which follows a Gaussian distribution (generated by Box-Muller algorithm), has a strength ζ and is characterized by zero-average and spatial δ-correlation conditions [65][66][67]. Such white noise can be introduced to the system via two different modes (pathways) i.e.…”

Section: Methodsmentioning

confidence: 99%

“…Such white noise can be introduced to the system via two different modes (pathways) i.e. additive and multiplicative [65][66][67]. These two different modes can be discriminated on the basis of extent of system-noise interaction.…”

Section: Methodsmentioning

confidence: 99%

“…Motivated by this fact recently we have made thorough investigations on how Gaussian white noise affects the oscillator strength of doped QD [65]. We have also explored the role played by geometrical anisotropy [66] and PDEM [67,68] on various NLO properties of doped QD in presence of noise. However, despite a thorough literature survey we have not found any study that deals with influence of noise on OS under the purview of anisotropy and/or PDEM.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Noise-Modulated Effects of Anisotropy and Position Dependent Effective Mass on the Oscillator Strength of Impurity Doped Quantum Dots

Sarkar¹,

Ghosh²,

Mandal³

et al. 2016

JAN

Self Cite

View full text Add to dashboard Cite

We study the modulation of oscillator strength (OS) of impurity doped quantum dot (QD) under the influence of geometrical anisotropy and position-dependent effective mass (PDEM) in presence and absence of noise. The OS profiles are monitored as a function of anisotropy and dopant location considering PDEM and fixed effective mass (FEM). Noise considered here is Gaussian white noise which has been administered to the system additively and multiplicatively. Always a comparison has been attempted between FEM and PDEM to understand the role of the latter on OS profiles. Application of noise has been found to affect the OS profiles only over some particular domains of anisotropy and dopant location. And use of PDEM promotes greater contribution from noise than FEM in fabricating the OS profiles. The observations reveal sensitive interplay between noise and anisotropy/PDEM to tailor the features of OS profiles which bear substantial technological importance in the study of nonlinear optical properties of doped QD systems.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Noise-Modulated Effects of Anisotropy and Position Dependent Effective Mass on the Oscillator Strength of Impurity Doped Quantum Dots

Sarkar¹,

Ghosh²,

Mandal³

et al. 2016

JAN

Self Cite

View full text Add to dashboard Cite

show abstract

“…In both of these works, the PDM is taken into consideration and it has been found that the effect of the dressed PDM on the electronic and optical properties is significant. Furthermore, detailed discussions about the noise effect on the nonlinear optical properties of doped QD system with Gaussian PDM distribution have been performed . Gosh et al pointed out that, the optical responses in doped QD systems with PDM exhibit considerable departure from that of fixed effective mass…”

Section: Introductionmentioning

confidence: 99%

Effect of Intense Laser Field in Gaussian Quantum Well With Position‐Dependent Effective Mass

Sarı

Kasapoğlu

Şakiroğlu

et al. 2019

Physica Status Solidi (b)

View full text Add to dashboard Cite

In this paper, the effects of the intense laser field (ILF) and position dependent mass (PDM) on the electronic structure in a Gaussian quantum well are theoretically deduced by using the diagonalization method for obtaining energy levels and corresponding wave functions. We find that, in the case of narrow PDM distribution, the dependence of the energy levels on the effective length of the electron mass distribution becomes more apparent, and the evolution of the dressed mass with ILF is significant. Given this feature, it is more meaningful to take into consideration the PDM of the electron in the low dimensional semiconductor heterostructures under the ILF.

show abstract

“…For instance, Kavokin showed that the of electron and hole effective mass mismatch becomes important in excitons in quantum wells, Ou et al discussed about the position of energy levels in low‐dimensional semiconductor structures with and without the inclusion of a position‐dependent effective masses. Recently, the linear and nonlinear optical properties were studied taking into account the position‐dependent effective mass . Khordad investigated the effect of the position‐dependent effective mass on shallow donor impurity states in a V ‐groove

{normalGaAs / italicAl}_{x} {Ga}_{1 - x}

As finding an important influence on the binding energy of the donor impurity.…”

Section: Introductionmentioning

confidence: 99%

Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well

Rojas-Briseño

Miranda-Pedraza

Martı́nez-Orozco

2016

Phys. Status Solidi B

View full text Add to dashboard Cite

In this work, the study of the 1s‐like exciton states and binding energy is presented for coupled double zinc blende GaN/InGaN quantum wells. The effective mass approximation and a variational procedure are the key theoretical tools used. The significant role of the position‐dependent effective mass is highlighted. It is found that the correct inclusion of position‐dependent masses is the cause of a noticeable difference in exciton energies with respect to the use of constant effective mass. In addition, the influence of the interaction of electrons and holes with the central barrier, and the effect of its size are particularly discussed.

show abstract

Influence of position-dependent effective mass on third-order nonlinear optical susceptibility of impurity doped quantum dots in the presence of Gaussian white noise

Cited by 13 publications

References 53 publications

Noise-Modulated Effects of Anisotropy and Position Dependent Effective Mass on the Oscillator Strength of Impurity Doped Quantum Dots

Noise-Modulated Effects of Anisotropy and Position Dependent Effective Mass on the Oscillator Strength of Impurity Doped Quantum Dots

Effect of Intense Laser Field in Gaussian Quantum Well With Position‐Dependent Effective Mass

Exciton binding energy in coupled double zinc blende GaN/InGaN quantum well

Contact Info

Product

Resources

About