Noise-Modulated Effects of Anisotropy and Position Dependent Effective Mass on the Oscillator Strength of Impurity Doped Quantum Dots

Abstract

We study the modulation of oscillator strength (OS) of impurity doped quantum dot (QD) under the influence of geometrical anisotropy and position-dependent effective mass (PDEM) in presence and absence of noise. The OS profiles are monitored as a function of anisotropy and dopant location considering PDEM and fixed effective mass (FEM). Noise considered here is Gaussian white noise which has been administered to the system additively and multiplicatively. Always a comparison has been attempted between FEM and PDEM to understand the role of the latter on OS profiles. Application of noise has been found to affect the OS profiles only over some particular domains of anisotropy and dopant location. And use of PDEM promotes greater contribution from noise than FEM in fabricating the OS profiles. The observations reveal sensitive interplay between noise and anisotropy/PDEM to tailor the features of OS profiles which bear substantial technological importance in the study of nonlinear optical properties of doped QD systems.