Influence of Nitrogen Flow Rates on the Structure, Hardness, and Electrical Resistivity of HfN Coatings by DC Sputtering

García-González, L.; Zamora‐Peredo, L.; Flores-Ramírez, Nelly; Romo, Miguel P.; Hernández-Torres, J.

doi:10.1007/s11665-014-1377-x

Cited by 14 publications

(7 citation statements)

References 31 publications

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“…Figure 4 illustrates the nanoindentation hardness and Young's modulus of the as-deposited multilayered Hf-N and Hf-Si-N coatings, which exhibit similar trends as varying the Si content. The hardness of the as-deposited Hf54N46 coatings was 22.3 ± 0.6 GPa, which is comparable to the reported values of 19−21 GPa [4,29,30] for HfN films prepared through sputtering. Seo et al [3] reported a high hardness value of 25.2 GPa for epitaxial HfN(001) layers.…”

Section: Multilayered Hf-si-n Coatingssupporting

confidence: 85%

Mechanical Properties and Oxidation Behavior of Multilayered Hf–Si–N Coatings

2018

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Monolithic Hf-Si-N coatings and multilayered Hf-Si-N coatings with cyclical gradient concentration were fabricated using reactive direct current magnetron cosputtering. The structure of the Hf-Si-N coatings varied from a crystalline HfN phase, to a mixture of HfN and amorphous phases and to an amorphous phase with continuously increasing the Si content. The multilayered Hf 48 Si 3 N 49 coatings exhibited a mixture of face-centered cubic and near-amorphous phases with a maximal hardness of 22.5 GPa, a Young's modulus of 244 GPa and a residual stress of −1.5 GPa. The crystalline phase-dominant coatings exhibited a linear relationship between the hardness and compressive residual stress, whereas the amorphous phase-dominant coatings exhibited a low hardness level of 15-16 GPa; this hardness is close to that of Si 3 N 4 . Various oxides were formed after annealing of the Hf-Si-N coatings at 600 • C in a 1% O 2 -99% Ar atmosphere. Monoclinic HfO 2 formed after Hf 54 N 46 annealing and amorphous oxide formed for the oxidation-resistant Hf 32 Si 19 N 49 coatings. The oxidation behavior with respect to the Si content was investigated by using transmission electron microscopy and X-ray photoelectron spectroscopy.

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Section: Multilayered Hf-si-n Coatingssupporting

confidence: 85%

Mechanical Properties and Oxidation Behavior of Multilayered Hf–Si–N Coatings

2018

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“…The growth rate also increases significantly, almost doubling for every kJ put in when the duty cycle was increased. The surface roughness of the HiPIMS grown films with higher duty cycle is still lower than the roughness of the films grown by García-González et al 10 by reactive dcMS and lower than the roughness reported by Yu et al 33 by reactive dc sputtering. …”

Section: The Effect Of Duty Cyclecontrasting

confidence: 58%

“…However, trends in grain size can be compared to some extent. García-González et al, 10 while depositing HfN films by reactive dcMS, note that grain size did not change significantly with increasing nitrogen flow rate. They report grain size in the range 7.9 -9.1 nm, increasing with decreasing nitrogen flow rate.…”

Section: A Influence Of Growth Temperature and Nitrogen Flow Ratementioning

confidence: 94%

“…In addition to the cubic δHfN, the hafnium nitride phase diagram has several other stable phases: Hexagonal αHf(N), rhombohedral ηHf 3 N 2 and rhombohedral ζHf 4 N 3 . 4 Hafnium nitride films have previously been grown by reactive direct current diode sputtering, 5 reactive radio frequency diode sputtering, 6,7 reactive direct current magnetron sputtering, [8][9][10][11][12][13][14][15][16][17] reactive radio frequency magnetron sputtering, [18][19][20][21][22] reactive high power impulse magnetron sputtering, 23 plasma-assisted atomic layer deposition, 24 electron beam physical vapor deposition, 25 activated reactive evaporation (ARE), 26 pulsed laser deposition 27,28 and ion beam assisted deposition (IBAD). 29 a tumi@hi.is Application of HfN thin films include diffusion barriers 7,22,30 and gate electrodes [31][32][33] in integrated circuits, as microelectronic emitters in field emitter arrays, 18 as absorber layer in solar cells, 17 as an intermediate layer in hydrogen permeation membranes, 34 as thermal barrier coatings 25 and as hard and protective coatings on tools.…”

Section: Introductionmentioning

confidence: 99%

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Growth of HfN thin films by reactive high power impulse magnetron sputtering

Thorsteinsson

Guðmundsson

2018

AIP Advances

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Thin hafnium nitride films were grown on SiO2 by reactive high power impulse magnetron sputtering (HiPIMS) and reactive direct current magnetron sputtering (dcMS). The conditions during growth were kept similar and the film properties were compared as growth temperature, nitrogen flow rate, and in the case of HiPIMS, duty cycle were independently varied. The films were characterized with grazing incidence X-ray diffraction (GIXRD), X-ray reflection (XRR) and X-ray stress analysis (XSA). HiPIMS growth had a lower growth rate for all grown films, but the films surfaces were smoother. The film density of HiPIMS deposited films grown at low duty cycle was comparable to dcMS grown films. Increasing the duty cycle increased the density of the HiPIMS grown films almost to the bulk density of HfN as well as increasing the growth rate, while the surface roughness did not change significantly. The HiPIMS grown films had large compressive stress while the dcMS grown films had some tensile stress. The dcMS grown films exhibit larger grains than HiPIMS grown films. The grain size of HiPIMS grown films decreases with increasing nitrogen flow rate, while the dcMS grain size increased with increasing nitrogen flow rate. This work shows that duty cycle during HiPIMS growth of HfN films has a significant effect on the film density and growth rate while other film properties seem mostly unaffected.

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“…Thus, the A4 sample had the most negligible thickness, while the A8 was the largest. The increase in the mean thickness that accompanies the growth of the N 2 flow is contrary to that found in studies that do not use a cathodic cage as a target, and this shows that the proportional increase in the N 2 flow decreases the deposition rate because, due to the "poisoning" of the target resulting from the formation of TiN on its surface, the performance of the reactive spraying decreases [23][24][25][26][27] .…”

Section: Resultsmentioning

confidence: 96%

Study of the Optoelectronic Properties of Titanium Nitride Thin Films Deposited on Glass by Reactive Sputtering in the Cathodic Cage

Madureira,

Monção,

Silva

et al. 2023

Mat. Res.

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We investigate the structural, optical, thermal-optical, and electronic properties of TiN x thin films utilizing a variety of experimental techniques, including spectroscopic ellipsometry, Raman spectroscopy, scanning electron microscopy, atomic force microscopy, thermal lens spectroscopy, and UV-VIS spectroscopy. Our experimental results indicate a remarkable metallic character in the TiN x thin films deposited under lower N 2 flow during treatment, as well as an increase in reflectance in the infrared region and thermal diffusivity as the partial N 2 flow is reduced, which is consistent with previous experimental studies. The microscopic origin of these trends is explained in terms of the atomic structure of the system, where Ti atoms contribute free carriers that interact with IR radiation and N atoms create imperfections in the lattice, causing greater scattering of phonons, respectively. The experimental results also indicate that the roughness of the films produced with a lower N 2 partial flow was lower than that of the films with a higher N 2 partial flow. To explain the deviation of optical properties from the ideal case, surface oxidation is also investigated. This facilitates the coating of smarting windows with TiNx thin films.

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Influence of Nitrogen Flow Rates on the Structure, Hardness, and Electrical Resistivity of HfN Coatings by DC Sputtering

Cited by 14 publications

References 31 publications

Mechanical Properties and Oxidation Behavior of Multilayered Hf–Si–N Coatings

Mechanical Properties and Oxidation Behavior of Multilayered Hf–Si–N Coatings

Growth of HfN thin films by reactive high power impulse magnetron sputtering

Study of the Optoelectronic Properties of Titanium Nitride Thin Films Deposited on Glass by Reactive Sputtering in the Cathodic Cage

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