Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil

Tailoring the dielectric properties of pyrochlore free lead zirconium titanate by synthesising it through different synthesis routes

“…Thus, it can be envisaged that the dipole moment of the material contribution is not playing any role in this particular temperature range. The small humps obtained can therefore be ascribed to space charge relaxation mechanism or trapping of charge carriers [16]. The dipole moment enhancement, its ordering and its contribution to polarisation are prevalent only in the immediate vicinity of transition temperature.…”

Effect of Carrier Gas Species on Ferroelectric Properties of PZT/Stainless‐Steel Fabricated by CO2 Laser‐Assisted Aerosol Deposition

“…grain growth in the films occurred in the order O 2 <N 2 <He as the carrier gases used for film deposition. It has been reported that the improved electrical properties of PZT films annealed in N 2 gas are caused by compensation of O 2 vacancies 7 . It seems to generate the O 2 vacancies within the film because the CO 2 laser annealing was carried out under the vacuum for preventing the thermal diffusion by the atmosphere.…”

Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors

“…This is mainly due to reduced oxygen vacancies and trap density in PZT films in annealed devices. 25 The MFeNS 2.5 structures were observed to show lower leakage current as compared to MFeOS 2.5 capacitors indicating the reduced direct tunneling across Si 3 N 4 layer. This is consistent with extensively studied data that the silicon nitride film in this thickness regime has better dielectric property and integrity than SiO 2.…”