Influence of Neutron Irradiation on Electron Traps Existing in GaN-Based Transistors

Neutron Irradiation Impact on AlGaN/GaN HEMT Switching Transients

“…The transient recovery of HEMT output current following off-state biasing has a complex dependence on biasing conditions after irradiation: changes can vary from an apparent complete suppression to a major enhancement of active trap density, increasing gate lag and resulting in slower overall I D recovery. This demonstrates that AlGaN/GaN HEMT neutron damage susceptibility is more complex at these irradiation levels than suggested by previous reports of either neutroninduced defect suppression [14], or output degradation [11], [13].…”

“…A higher neutron fluence study found reductions in I DS and transconductance (G m ), but not cut-off frequency after exposure to 10 15 n/cm 2 ( E = 1 MeV) [13]. Conversely, AlGaN/GaN HEMTs degraded by prior electrical stress have shown partial recovery of I DS [14] following irradiation with thermalised Am-Be neutrons to 6 × 10 11 n/cm 2 . Consequently, the impact of neutron irradiation on the switching and transient recovery characteristics of HEMTs remains unclear.…”

Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons

“…In this context, the aim of this work is to investigate the radiation response of both GaN and Ga 2 O 3 exposed to the natural radiation background at sea level consisting of atmospheric neutrons with energies ranging from thermal to GeV. The response of electronic devices made from these materials to radiation has been the focus of most of the research in this area [21][22][23][24][25]. The effects of neutron irradiation on bulk GaN or Ga 2 O 3 at the material level (i.e., not integrated Crystals 2024, 14, 128 2 of 12 into electronic devices) have been studied only to a limited extent.…”