Influence of Nanocomposite Materials for Next Generation Nano Lithography

Lewis, Scott M.; Piccirillo, L.

doi:10.5772/15624

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2013

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“…However, the achievable ARs of PMMA on solid substrates are limited to 2:1 to 4:1 at 25 keV [1,2], to approximately 5:1 at 50 keV [1,3], and to 12:1 to 20:1 at 100 keV [1,4,5]. Similarly, ZEP resist has ARs limited to 4:1 at 20 keV [6] and to 7:1 at 100 keV [7], albeit with over three times higher sensitivity than PMMA.…”

Section: Introductionmentioning

confidence: 99%

SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography

2013

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A detailed process characterization of SML electron beam resist for high-aspect-ratio nanopatterning at high sensitivity is presented. SML contrast curves were generated for methyl isobutyl ketone (MIBK), MIBK/isopropyl alcohol (IPA) (1:3), IPA/water (7:3), n-amyl acetate, xylene, and xylene/methanol (3:1) developers. Using IPA/water developer, the sensitivity of SML was improved considerably and found to be comparable to benchmark polymethylmethacrylate (PMMA) resist without affecting the aspect ratio performance. Employing 30-keV exposures and ultrasonic IPA/water development, an aspect ratio of 9:1 in 50-nm half-pitch dense grating patterns was achieved representing a greater than two times improvement over PMMA. Through demonstration of 25-nm lift-off features, the pattern transfer performance of SML is also addressed.

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