Influence of molecular beam effusion cell quality on optical and electrical properties of quantum dots and quantum wells

Nguyen, Giang N.; Korsch, Alexander R.; Schmidt, Marcel; Ebler, C.; Labud, P. A.; Schott, Rüdiger; Lochner, Pia; Brinks, Fabian; Wieck, Andreas D.; Ludwig, Arne

doi:10.1016/j.jcrysgro.2020.125884

Cited by 2 publications

(1 citation statement)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To achieve sufficient purity that is needed for quantum applications, MBE is a good choice, as it is known to yield material with excellent purity levels [20][21][22]. A technique to form GaAs QDs in an MBE setup is the infilling of self-assembled nanoholes formed by LDE [13,23].…”

Section: Sample Growthmentioning

confidence: 99%

Charge Tunable GaAs Quantum Dots in a Photonic n-i-p Diode

et al. 2021

View full text Add to dashboard Cite

In this submission, we discuss the growth of charge-controllable GaAs quantum dots embedded in an n-i-p diode structure, from the perspective of a molecular beam epitaxy grower. The QDs show no blinking and narrow linewidths. We show that the parameters used led to a bimodal growth mode of QDs resulting from low arsenic surface coverage. We identify one of the modes as that showing good properties found in previous work. As the morphology of the fabricated QDs does not hint at outstanding properties, we attribute the good performance of this sample to the low impurity levels in the matrix material and the ability of n- and p-doped contact regions to stabilize the charge state. We present the challenges met in characterizing the sample with ensemble photoluminescence spectroscopy caused by the photonic structure used. We show two straightforward methods to overcome this hurdle and gain insight into QD emission properties.

show abstract