Influence of Metal and Polymer Substrate on SiC_xN_yO_z Film Formation by Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane, Nitrogen and Argon Gases

Abstract

Using the plasma-enhanced chemical vapordeposition without any heating assistance, a SiC x N y O z film was formed on a substrate made of metals and polymers, such as aluminum, tin, polyethylene naphthalate, polyvinylchloride and polytetrafluoroethylene. These have low melting points and low glass transition temperatures. Utilizing non-corrosive gases, such as monomethylsilane, nitrogen and argon, at 10-20 Pa, 80-500 nm-thick films were obtained. The film thickness and film composition of the silicon, carbon, nitrogen and oxygen were found to depend on the substrate material. When the substrate contained oxygen, chlorine and fluorine atoms, the film became thin and contained a high oxygen concentration.

Chemical Conditions of SiCNO Film Exposed to ClF3 Gas

“…This study used the parallel plate PECVD reactor having 80-mmdiameter upper and lower electrodes for the glow discharge (Soft Plasma Etcher-SE, Meiwafosis Co., Ltd., Tokyo, Japan. ), [10][11][12][13][14] as shown in Fig. 1.…”

“…In this study, the PECVD technique with no heating assistance was utilized for designing and preparing the SiCNO film. [10][11][12][13] The formed film was exposed to the 10% ClF 3 gas, which was strong but milder than that used in the previous study. 10 The surface chemical conditions and the contents in the film were analyzed in detail to study the process during the etching.…”

Electric Current in Rate Equation for Parallel Plate Plasma-Enhanced Chemical Vapour Deposition of SiCxNyOz Film without Heat Assistance

“…The SEM and XPS data of the samples were reported in detail in the previous reports. 6,7 The center point of substrate was evaluated. Additionally, five substrates were simultaneously used for one film growth operation and were evaluated to confirm that there were not significant differences between the samples.…”

Anticorrosive Behavior of SiCxNyOz Film Formed by Non-Heat Assistance Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane, Nitrogen and Argon Gases

“…The SiC x N y O z film is useful for various purposes, such as low dielectric constant films, diffusion barrier, copper capping layer and etch stop. [5][6][7][8] Because the advanced electronic devices often consist of various materials having a low melting point, 9 the anticorrosive films should be produced at low temperatures, such as room temperature. Thus, as a new formation process, the plasma-enhanced chemical vapor deposition (PECVD) without any heating assistance has been developed and used for the SiC x N y O z film formation on various substrate materials, in the previous studies.…”

“…Thus, as a new formation process, the plasma-enhanced chemical vapor deposition (PECVD) without any heating assistance has been developed and used for the SiC x N y O z film formation on various substrate materials, in the previous studies. [9][10][11] Some of the substrate materials were shown to influence the formation rate and the contents of the film.…”