Influence of interface compounds on interface bonding characteristics of aluminium and silicon carbide

Recent advances in joining of SiC-based materials (monolithic SiC and SiCf/SiC composites): Joining processes, joint strength, and interfacial behavior

“…Most of the joining of SiC ceramics and SiC f /SiC composites to themselves [23,24], graphite [25], and metals (such as W [26][27][28], F82H steel [29], and Al alloy [30]) using no interlayer was performed by diffusion bonding or hot-pressing sinter bonding process, except that a casting process was adopted to join SiC ceramic to Al alloy, leaving a super-low joint tensile strength of ~0.4 MPa [31,32], as shown in Table 1. The joining temperature varied greatly from 600 to 2000 ℃ with the joining objects while employing the diffusion bonding process, the joining pressure ranged from several to dozens of MPa, and the holding time spanned from 5 to 600 min.…”

“…Moreover, perfect bonding interfaces without visible defects can be observed during diffusion bonding of SiC ceramic plate, disk, and pipe to themselves by spark plasma sintering (Fig. 4); however, the three SiC components were not exactly identical in porosity after diffusion bonding due to two kinds of different preparation processes of SiC ceramics, [31,32] Noted that the joint strength values without any temperature and radiation condition denote the ones obtained at or around room temperature, and that the double slash (//) denotes the joining of SiC f /SiC composites in the whole text. and the SPS-processed disk-shaped specimens remained almost fully dense [23].…”

“…Interfacial reaction and elemental diffusion are the two main bonding mechanisms for direct joining of SiC to metals. The Al 4 C 3 was usually formed at the SiC/Al interfaces, and decreasing the formation of Al 4 C 3 near the SiC can improve the interfacial bonding due to the presence of alloying elements, such as Sn, Mg, Si [31,32]. Furthermore, only a W-free amorphous reaction layer (which was considered to be non-equilibrium silicon oxide including carbon) of 500-600 nm thick was detected at the SiC/W interface, and nano-sized precipitates containing O, Si, and W were formed and homogenously distributed in the reaction layer, which can contribute to the interfacial bonding ( Fig.…”

Evaluation of Microstructure and Mechanical Properties in Dissimilar Joint of SSM7075 with SSM356 Aluminum Alloy using Diffusion Bonding

“…This is similar to solution heat treatment process. Thus, only the recrystallization of the parent microstructures can be considered as a microstructural transformation caused by the thermal [19][20]. When the temperature is increased from 673 to 823 K, hardness is also increased.…”

An experimental investigation of the interface characteristics of aluminium/silicon carbide

“…The length of diffusion [12]: L = √ 4Dt, where L -diffusion length of Si, t -time of diffusion between the matrix and the reinforcement. It has been found that the rate of diffusivity of Si increases with an increase in the temperature [13] and time. Hence, the diffusion rate of Si in the matrix region depends on the holding temperature and time.…”