Influence ofs-dexchange interaction on the conductivity of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">M

Sawicki, M.; Dietl, T.; Kossut, J.; Igalson, J.; Wójtowicz, T.; Plesiewicz, W.

doi:10.1103/physrevlett.56.508

Cited by 189 publications

(153 citation statements)

References 29 publications

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“…The resistivity also shows another upturn at much lower temperatures. There have been a number of attempts to explain the resistivity peak so far [3], which invoked, e.g., scattering by critical fluctuations [4], the formation of magnetic polarons [5,6], 'dynamical' mean field calculations [7], or the interplay with universal conductance fluctuations [8]. Although these theoretical approaches have been quite successful in addressing a particular range or qualitative aspect of the data, however, a theoretical framework that could quantitatively explain all characteristic features observed in Ga 1−x Mn x As has not been available so far.…”

mentioning

confidence: 99%

Scaling Theory of Magnetoresistance and Carrier Localization inGa1−xMnxAs

et al. 2009

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We compare experimental resistivity data on Ga1−xMnxAs films with theoretical calculations using a scaling theory for strongly disordered ferromagnets. All characteristic features of the temperature dependence of the resistivity can be quantitatively understood through this approach as originating from the close vicinity of the metal-insulator transition. In particular, we find that the magnetic field induced changes in resistance cannot be explained within a mean-field treatment of the magnetic state, and that accounting for thermal fluctuations is crucial for a quantitative analysis. Similarly, while the non-interacting scaling theory is in reasonable agreement with the data, we find clear evidence in favor of interaction effects at low temperatures.

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confidence: 99%

Scaling Theory of Magnetoresistance and Carrier Localization inGa1−xMnxAs

et al. 2009

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“…A large positive MR of 124% has been observed in the film with the lowest electron concentration of 8.3×10 17 cm -3 , while only negative MR of -1.9% was observed in the film with an electron concentration of 9.9×10 19 cm -3 at 5 K [54]. The positive MR decreases drastically with increasing temperature, and only negligible negative MR can be observed above 50 K. In magnetic doped ZnO, the positive MR is related with the quantum corrections to the conductivity due to the influence of the spin splitting of the conduction band on the electron-electron interaction [52,55]. For negative MR the underlying physical origin is much debated.…”

Section: Pld Grown Zncoo Filmsmentioning

confidence: 98%

Ferromagnetic transition metal implanted ZnO: A diluted magnetic semiconductor?

Zhou

Potzger

et al. 2009

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Recently theoretical works predict that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS magnetic ions substitute cation sites of the host semiconductor and are coupled by free carriers resulting in ferromagnetism. One of the main obstacles in creating DMS materials is the formation of secondary phases because of the solid-solubility limit of magnetic ions in semiconductor host. In our study transition metal ions were implanted into ZnO single crystals with the peak concentrations of 0.5-10 at.%. We established a correlation between structural and magnetic properties. By synchrotron radiation X-ray diffraction (XRD) secondary phases

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“…This behaviour is different from what usually is observed in non magnetic semiconductors with hopping conductivity, when positive large magneto-reistance (caused by wavefunction shrinking) increases linearly with external magnetic field. Positive magneto-resistance at low temperature is usually observed in deluted magnetic semiconductors at low field which is related with the splitting of band state caused by s-d exchange interaction [38] [39]. In magnetic semiconductors, with positive magneto-resistance, differently to FTO with strong carrier localization, carriers are free and spin polarization between free carriers and the spin of magnetic impurity occurs.…”

Section: Magneto-resistance In Perpendicular Magnetic Fieldmentioning

confidence: 99%