Magnetic devices are a leading contender for the implementation of memory and logic technologies that are non-volatile, that can scale to high density and high speed, and that do not wear out. However, widespread application of magnetic memory and logic devices will require the development of efficient mechanisms for reorienting their magnetization using the least possible current and power. There has been considerable recent progress in this effort; in particular, it has been discovered that spin-orbit interactions in heavy-metal/ferromagnet bilayers can produce strong current-driven torques on the magnetic layer, via the spin Hall effect in the heavy metal or the Rashba-Edelstein effect in the ferromagnet. In the search for materials to provide even more efficient spin-orbit-induced torques, some proposals have suggested topological insulators, which possess a surface state in which the effects of spin-orbit coupling are maximal in the sense that an electron's spin orientation is fixed relative to its propagation direction. Here we report experiments showing that charge current flowing in-plane in a thin film of the topological insulator bismuth selenide (Bi2Se3) at room temperature can indeed exert a strong spin-transfer torque on an adjacent ferromagnetic permalloy (Ni81Fe19) thin film, with a direction consistent with that expected from the topological surface state. We find that the strength of the torque per unit charge current density in Bi2Se3 is greater than for any source of spin-transfer torque measured so far, even for non-ideal topological insulator films in which the surface states coexist with bulk conduction. Our data suggest that topological insulators could enable very efficient electrical manipulation of magnetic materials at room temperature, for memory and logic applications.

Public Reporting Burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Manuscript published: Nature 439, 303-306 (2006) Report Title ABSTRACT This is a report of a publication supported by the research grant:"Artificial 'spin ice' in a geometrically frustrated lattice of nanoscale ferromagnetic islands", R.

This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, i.e. electronics that exploit carrier spin polarization. Among the most carefully studied of these materials is (Ga,Mn)As, in which meticulous optimization of growth techniques has led to reproducible materials properties and ferromagnetic transition temperatures well above 150 K. We review progress in the understanding of this particular material and efforts to address ferromagnetic semiconductors as a class. We then discuss proposals for how these materials might find applications in spintronics. Finally, we propose criteria that can be used to judge the potential utility of newly discovered ferromagnetic semiconductors, and we suggest guidelines that may be helpful in shaping the search for the ideal material.

Understanding and control of spin degrees of freedom on the surfaces of topological materials are the key to future applications as well as for realizing novel physics such as the axion electrodynamics associated with time-reversal symmetry breaking on the surface. We experimentally demonstrate magnetically induced spin reorientation phenomena simultaneous with a Dirac-metal to gapped-insulator transition on the surfaces of manganese-doped Bi 2 Se 3 thin films. The resulting electronic groundstate exhibits unique hedgehog-like spin textures at low energies which directly demonstrates the mechanics of timereversal symmetry breaking on the surface. We further show that an insulating gap induced by quantum tunneling between surfaces exhibits spin texture modulation at low energies but respects time-reversal invariance. These spin phenomena and the control of their Fermi surface geometrical phase first demonstrated in our experiments pave the way for future realization of many predicted exotic magnetic phenomena of topological origin.Since the discovery of three dimensional topological insulators [1][2][3][4][5], topological order proximity to ferromagnetism has been considered as one of the core interests of the field [6][7][8][9][10][11][12][13][14][15][16]. Such interest is strongly motivated by the proposed time-reversal (TR) breaking topological physics such as quantized anomalous chiral Hall current, spin current, axion electrodynamics, and inverse spin-galvanic effect [9][10][11][12], all of which critically rely on finding a way to break TR symmetry on the surface and utilize the unique TR broken spin texture for applications. Since quantum coherence is essential in many of these applications, devices need to be engineered into thin films in order to enhance or de-enhance surface-tosurface coupling or the quantum tunneling of the electrons. The experimental spin behavior of surface states under the two extreme limits, namely the doped magnetic groundstate and ultra-thin film quantum tunneling groundstate, is thus of central importance to the entire field. However, surprisingly, it is not known what happens to the spin configuration under these extreme conditions relevant for device fabrications. Fundamentally, TR symmetry is inherently connected to the Kramers' degeneracy theorem which states that when TR symmetry is preserved, the electronic states at the TR invariant momenta have to remain doubly spin degenerate. Therefore, the establishment of TR breaking effect fundamentally requires measurements of electronic groundstate with a spin-sensitive probe. Here we utilize spin-3 resolved angle-resolved photoemission spectroscopy to measure the momentum space spin configurations in systematically magnetically doped, non-magnetically doped, and ultra-thin quantum coherent topological insulator films [17], in order to understand the nature of electronic groundstates under two extreme limits vital for magnetic topological devices. These measurements allow us to make definitive conclusions regarding magnetism on to...

Recent studies on the magneto-transport properties of topological insulators (TI) 1-7 have attracted great attention due to the rich spin-orbit physics and promising applications in spintronic devices. Particularly the strongly spinmoment coupled electronic states have been extensively pursued to realize efficient spin-orbit torque (SOT) switching. However, so far current-induced magnetic switching with TI has only been observed at cryogenic temperatures. It remains a controversial issue whether the topologically protected electronic states in TI could benefit spintronic applications at room temperature. In this work, we report full SOT switching in a TI/ferromagnet bilayer heterostructure with perpendicular magnetic anisotropy at room temperature. The low switching current density provides a definitive proof on the high SOT efficiency from TI. The effective spin Hall angle of TI is determined to be several times larger than commonly used heavy metals. Our results demonstrate the robustness of TI as an SOT switching material and provide a direct avenue towards applicable TI-based spintronic devices.Spin-orbit coupling has been extensively studied for the conversion between charge current and spin current 8 . When neighbored with a ferromagnet (FM), non-equilibrium spins induced by the spin-orbit coupling can exert torques onto magnetic moments (Fig.

Time-resolved Kerr reflectivity of two-dimensional electron gases in Il-VI semiconductors provides a direct measure of electron spin precession and relaxation over a temperature range from 4 to 300 kelvin. The introduction of n-type dopants increases the electronic spin lifetimes several orders of magnitude relative to insulating counterparts, a trend that is also observed in doped bulk semiconductors. Because the electronic spin polarization in these systems survives for nanoseconds, far longer than the electron-hole recombination lifetime, this technique reveals thousands of spin precession cycles of 15 gigahertz per tesla within an electron gas. Remarkably, these spin beats are only weakly temperature dependent and persist to room temperature.Extending spin coherence times in semicollductors is currently of great interest to those seeking to utilize coherent dynamics within practical devices (1). Recent discoveries (2) that spin ensembles can be used collectively as single quantuln elements have renewed optimism that coherent electronics will eventually be realized as a basis for computation. Semiconductors offer the advantage that spin orientation of carriers (electrons and holes) induces strong optical nonlinearities that may be used to establish and probe electronic coherences (3, 4).Here vve use time-resolved magneto-optical techniques (5, 6) to initiate and monitor electronic spin precession in modulationdoped 11-VI selniconductor quantuln wells (QWs). Remarkably, we found that in the presence of a two-dimensional electron gas (ZDEG), the sample sustained this dynamical spin polarization for nearly three orders of magnitude longer than did insulating samples at low temperatures. Moreover, the spin lifetime surpassed the recombination lifetime by one to two orders of magnitude, which suggests that the 2DEG acquires a net polarization either through energy relaxation of spin-polarized electrons or through angular-momentum transfer within the electronic system. Our studies further showed that these nanosecond spin lifetimes persist to room temperature. Measurements on bulk epilayers revealed similar effects, even for low doping levels, and showed that these phenomena are not restricted to quantum-confined electronic systems. These findings demonstrate that external contributions to electronic spin decoherence are substantially reduced in these solid-state systems.

We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga 1-x Mn x As grown by low temperature molecular beam epitaxy.Annealing at the optimal temperature of 250 °C for less than 2 hours significantly enhances the conductivity and ferromagnetism, but continuing the annealing for longer times suppresses both. These data indicate that such annealing induces the defects in Ga 1-x Mn x As to evolve through at least two different processes, and they point to a complex interplay between the different defects and ferromagnetism in this material. *schiffer@phys.psu.edu