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SrVO3 (SVO) is a model system for strongly correlated oxides and is highly promising as conductive layer in heterostructures. Therefore, the control of electronic properties and morphology are essential for the advanced applications. Here, the oxygen stability during and after the deposition is explored, as SVO film is expected to undergo different postdeposition thermal and atmosphere treatments during its integration in a heterostructure. Hence, the influence of oxygen stability on morphology and electrical properties of the metallic SrVO3 grown by pulsed laser deposition has been investigated. Films grown under vacuum (SrVO3− δ ) exhibit a very smooth surface while films grown under higher oxygen pressure roughen and present nanostructures at the surface. These nanostructures are found to be of Sr3V2O8 phase and their apparition can be controlled by the oxygen supply. Subsequent thermal treatments at different temperatures under same oxygen pressure prevent formation of the Sr3V2O8 phase, lead to the stoichiometric SrVO3, and thus improve the transport properties. In this study is shown the extreme sensitivity of SVO to oxygen and the conditions to obtain high quality smooth SVO films with improved electrical properties for electrode application.

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Strongly compensated Ga2O3 is shown to be an intrinsic (or native) p-type conductor with the largest bandgap for any reported p-type transparent semiconductor oxide which may shift the frontiers in fields such as power electronics and photonics.

The authors demonstrate herein that by lowering of a growth temperature they can obtain ZnMnO layers with homogeneous Mn distribution, which are free of Mn accumulations and inclusions of foreign phases due to other Mn oxides. These layers (with low Mn content fractions) show paramagnetic phase in room temperature magnetization measurements. Contribution of a high temperature ferromagnetic phase is missing, which the authors relate to blocking of spinodal decomposition of ZnMnO under controlled growth conditions of atomic layer deposition.

Transport and structural properties of ultrathin films of SrVO 3 (SVO) on SrTiO 3 (001) substrates have been investigated and correlations between Metal-Insulator Transition (MIT) and strain relaxation have been studied.Below a critical thickness, when the film is subjected to tensile strain, the resistivity of the films is increasing with decreasing film thickness. Transport properties evolve from metallic to strongly localized state in several monolayer thick films, showing the bandwidth W control of the Mott-Hubbard transition with the film thickness. Furthermore, a dimensional crossover from 3 Dimensions to 2 Dimensions has been studied by transport measurements. Using Quantum Corrections to the Conductivity (QCC), it is demonstrated that MIT is due to renormalized electron-electron interaction in this material. Finally, for films with the thickness below 6 nm, the confinement provides new effect in magnetotransport with apparition of weak antilocalization in ultrathin films.

The physics of nickel perovskites is rich with various competing electronic phases that can be tuned by chemical or external degrees of freedom. As such, nickelates show strong potential for oxide electronics devices based on strongly correlated systems. However, their complexity has hitherto challenged a detailed understanding of classical material engineering effects using, e.g., epitaxial strain. Here we investigate this important pending issue by comparing experimental data with results from first-principles calculations using the Heyd-Scuseria-Ernzerhof hybrid exchange-correlation functional. The theory properly describes the magnetic ground state as well as the preferred orbital occupation observed by x-ray linear dichroism. It also shows that the strain-induced modulation of the metal-to-insulator transition temperature is likely driven by changes in the bandwidth, rather than by the charge-transfer energy.

We study the effect of oxygen vacancies on the electronic structure of the model strongly correlated metal SrVO3. By means of angle-resolved photoemission (ARPES) synchrotron experiments, we investigate the systematic effect of the UV dose on the measured spectra. We observe the onset of a spurious dose-dependent prominent peak at an energy range were the lower Hubbard band has been previously reported in this compound, raising questions on its previous interpretation. By a careful analysis of the dose dependent effects we succeed in disentangling the contributions coming from the oxygen vacancy states and from the lower Hubbard band. We obtain the intrinsic ARPES spectrum for the zero-vacancy limit, where a clear signal of a lower Hubbard band remains. We support our study by means of state-of-the-art ab initio calculations that include correlation effects and the presence of oxygen vacancies. Our results underscore the relevance of potential spurious states affecting ARPES experiments in correlated metals, which are associated to the ubiquitous oxygen vacancies as extensively reported in the context of a two-dimensional electron gas (2DEG) at the surface of insulating d 0 transition metal oxides. A major challenge of modern physics is to understand the fascinating phenomena in strongly-correlated transition metal oxides (TMOs), which emerge in the neighborhood of the Mott insulator state. Some preeminent examples that have gathered the interest for almost 30 years are high temperature superconductivity, colossal magnetoresistance, heavy fermion physics and, of course, the Mott metal-insulator transition itself [1]. Significant theoretical progress was made with the introduction of Dynamical Mean Field Theory (DMFT) and its combination with ab initio Density Functional methods (LDA+DMFT), which allows treatment of the interactions promoting itinerancy and localization of electrons on equal footing [2][3][4]. Among the most emblematic achievements of DMFT is the prediction of a Hubbard satellite, which splits off of the conduction band of a metal. This satellite results from the partial localization of conduction electrons due to their mutual Coulomb repulsion. Early DMFT studies also showed that it is the precursor of the localized electronic states of a Mott insulator [5]. Since then, these predictions promoted a large number of studies using photoemission spectroscopy, which is a technique to directly probe the presence of Hubbard bands. In this context, the TMO system SrVO 3 has emerged as the drosophila model system to test the predictions of strongly correlated electron theories. In fact, SrVO 3 is arguably the simplest correlated metal. It is a simple cubic perovskite, with nominally one electron per V site, which occupies a 3 fold degenerate t 2g conduction band. While the presence of a satellite in the photoemission spectra of Ni metal was already well known, in the context of correlated TMOs, the Hubbard band was originally reported in a systematic investigation of Ca 1−x Sr x VO 3 [6], which was follo...