P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Chikoidze, Ekaterine; Fellous, Adel; Pérez‐Tomás, Amador; Sauthier, Guillaume; Tchelidze, Tamar; Ton-That, Cuong; Huynh, Tung Thanh; Phillips, M. R.; Russell, Stephen A. O.; Jennings, Michael R.; Bérini, Bruno; Jomard, François; Dumont, Y.

doi:10.1016/j.mtphys.2017.10.002

Cited by 173 publications

(120 citation statements)

References 65 publications

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“…However, the 3.4 eV band observed in the undoped sample is quenched in the Zn doped one, where a band centered in 2.7 eV arises. This result is in very good agreement with recently reported CL results, which showed 3.4, 3.0, and 2.6 eV bands in nominally undoped p‐type Ga 2 O 3 but only the 3.4 and 3.0 eV in n‐type ones . Due to this, the 2.6 eV band was considered a signature emission of the acceptor levels.…”

Section: Resultssupporting

confidence: 93%

“…The reason seems to be the band structure that favors the self‐trapping of holes due to acceptor levels at 0.6 eV or at even more than 1 eV from the valence band, as well as compensation by native donors, such as oxygen vacancies . However, a recent work reported the p‐type doping in undoped Ga 2 O 3 epi‐wafers, Zn‐doped Ga 2 O 3 nanowires or Mg‐doped Ga 2 O 3 thin films . Native defects play a key role in both optical and electrical properties in gallium oxide.…”

Section: Introductionmentioning

confidence: 99%

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Structural and Luminescence Properties of Ga₂O₃:Zn Micro‐ and Nanostructures

López

Alonso-Orts

Nogales

et al. 2018

Physica Status Solidi (a)

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High quality Zn‐doped monoclinic gallium oxide micro‐ and nanostructures are obtained by a thermal treatment based on vapor–solid (VS) growth mechanism. Nanowires and ribbons are formed, the latter being the more abundant. The microstructural features are assessed by micro‐Raman and transmission electron microscopy revealing their crystal structure properties, such as the [‐110] growth direction for ribbons and being single crystals. In particular, a strong‐scattered light polarization dependence is reflected in the detected Raman modes. Luminescence of both Zn doped and undoped Ga2O3 samples is thoroughly studied by several techniques, exciting light with electrons or photons. Cathodoluminescence (CL) at a wide temperature range reveals that a band centered at around 2.7 eV, assigned to Zn doping in monoclinic Ga2O3, is thermally activated at temperatures above 200 K and dominates at room temperature. Besides, the characteristic bands at 3.4 and 3.0 eV of undoped Ga2O3 are obtained as well but with less relative intensity. Photoluminescence (PL) analysis at room temperature shows a similar set of bands, but slightly redshifted with respect to CL. Their relative intensities are strongly dependent on the excitation conditions and their time decays are studied by time‐resolved PL (TRPL).

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Section: Resultssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Structural and Luminescence Properties of Ga₂O₃:Zn Micro‐ and Nanostructures

López

Alonso-Orts

Nogales

et al. 2018

Physica Status Solidi (a)

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“…Experimentally, n‐type doping of β ‐Ga 2 O 3 has been achieved by various techniques . At variance, p‐type β ‐Ga 2 O 3 appears to be more difficult to realize, in accordance with density functional theory (DFT) studies …”

Section: Coordination N and Average Bond Length R For Interstitial Cmentioning

confidence: 82%

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in β‐Ga₂O₃

Bouzid

Pasquarello

2019

Physica Rapid Research Ltrs

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Formation energies of C, Si, and Ge defects in β‐Ga2O3 are studied through hybrid functional calculations. The interstitial defects of these elements generally occur at higher energies than their substitutional counterparts, but are more stable at low Fermi energies in Ga‐rich conditions, with their range of stability increasing from Ge and Si to C. In n‐type and Ga‐rich conditions, interstitials of Si and Ge show significantly higher formation energies than their substitutional form, but this difference is less pronounced for C. Charge transition levels of interstitial defects lie in the upper part of the band‐gap, and account for several measured levels in unintentionally doped and Ge‐doped samples of β‐Ga2O3.

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“…45. Recently, hole mobilities have been measured at 0.2 cm 2V À1 s À1 ,46 well above their computationally predicted value of 1 Â 10 À6 cm 2 V À1 s À1 using the Einstein relation [Eq.…”

mentioning

confidence: 76%

Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

Lee

Flitsiyan

Chernyak

et al. 2018

Applied Physics Letters

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The influence of 1.5 MeV electron irradiation on minority transport properties of Si doped b-Ga 2 O 3 vertical Schottky rectifiers was observed for fluences up to 1.43 Â 10 16 cm À2. The Electron Beam-Induced Current technique was used to determine the minority hole diffusion length as a function of temperature for each irradiation dose. This revealed activation energies related to shallow donors at 40.9 meV and radiation-induced defects with energies at 18.1 and 13.6 meV. Time-resolved cathodoluminescence measurements showed an ultrafast 210 ps decay lifetime and reduction in carrier lifetime with increased irradiation.

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P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Cited by 173 publications

References 65 publications

Structural and Luminescence Properties of Ga₂O₃:Zn Micro‐ and Nanostructures

Structural and Luminescence Properties of Ga₂O₃:Zn Micro‐ and Nanostructures

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in β‐Ga₂O₃

Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

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P-type β-gallium oxide: A new perspective for power and optoelectronic devices

Cited by 173 publications

References 65 publications

Structural and Luminescence Properties of Ga2O3:Zn Micro‐ and Nanostructures

Structural and Luminescence Properties of Ga2O3:Zn Micro‐ and Nanostructures

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in β‐Ga2O3

Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

Contact Info

Product

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Structural and Luminescence Properties of Ga₂O₃:Zn Micro‐ and Nanostructures

Structural and Luminescence Properties of Ga₂O₃:Zn Micro‐ and Nanostructures

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in β‐Ga₂O₃