Influence of Hydrogen Plasma on the Defect Passivation of Polycrystalline Si Thin Film Solar Cells

Gorka, B.; Rau, B.; Dogan, P.; Becker, Christiane; Ruske, F.; Gall, S.; Rech, Bernd

doi:10.1002/ppap.200930202

Cited by 35 publications

(22 citation statements)

References 23 publications

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“…The procedure was based on a process developed for solid-phase crystallized silicon [15]: First, the sample was rapidly heated to a temperature of up to 600°C, then treated in a hydrogen plasma at 600°C under low pressures (50 Pa to 250 Pa) for 10 to 30 min, and finally cooled below 300°C with the plasma still active to prevent hydrogen effusion. By this procedure, several defects in the LPC-Si intragrain material are healed, and grain boundary defects are passivated.…”

Section: Hydrogen Plasma Passivationmentioning

confidence: 99%

PECVD Intermediate and Absorber Layers Applied in Liquid-Phase Crystallized Silicon Solar Cells on Glass Substrates

Gabriel

Frijnts²,

Calnan

et al. 2014

IEEE J. Photovoltaics

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Liquid-phase crystallized silicon absorber layers have been applied in heterojunction solar cells on glass substrates with 10.8% conversion efficiency and an open-circuit voltage of 600 mV. Intermediate layers of SiO x , SiN x , and SiO x N y , as well as the a-Si:H precursor layer, were deposited on 30 cm × 30 cm glass substrates using industrial-type plasma-enhanced chemical vapor deposition equipment. After crystallization on 3 cm × 5 cm area using a continuous-wave infrared laser line, the resulting polysilicon material showed high material quality with large grain sizes. Index Terms-Heterojunction, liquid-phase crystallization, plasma-enhanced chemical vapor deposition (PECVD), thin-film silicon.

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Section: Hydrogen Plasma Passivationmentioning

confidence: 99%

PECVD Intermediate and Absorber Layers Applied in Liquid-Phase Crystallized Silicon Solar Cells on Glass Substrates

Gabriel

Frijnts²,

Calnan

et al. 2014

IEEE J. Photovoltaics

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“…The dopant in the films is activated and some defects are removed trough RTA process [3]. Hydrogen passivates defects in the film and thus leads to better electronic film quality [4]. The cells' performance is greatly improved by these two processes.…”

Section: Introductionmentioning

confidence: 99%

Effects of absorber doping and post-deposition treatments on the performance of n-type poly-Si thin film solar cells on glass

Xue

Kim

Varlamov

2013

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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High temperature, 740 °C or 800 °C, hydrogenation treatment was applied to n-type polycrystalline silicon thin film solar cells on glass with absorber doping from 5x10 16 cm -3 to 5x10 17 cm -3 , after rapid thermal annealing at 930 °C or 970 °C. Effects of hydrogenation and RTA temperature on the performance of n-type poly-Si thin film solar cells were studied. It is found that higher RTA temperature leads to higher open circuit voltage in all absorber doping range at low hydrogenation temperature. Higher hydrogenation temperature improves the open circuit voltage in the mediate absorber doping range significantly and this effect is independent of RTA temperature.Index Terms -thin film material, photovoltaic cells, polycrystalline silicon.

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“…Extensive studies were done by Nickel et al to reveal the behavior of the diffusion mechanism and to measure the concentration profiles using the secondary ion mass spectroscopy (SIMS) characterization method. However, few reports have been published on the impact of hydrogenation on the device performance, except for some works done by Terry et al [3] and Gorka et al [4], [5] on different types of poly-Si thin-film solar cells and plasma processes. The impact of the hydrogenation temperature on the solar cell's open-circuit voltage V oc was investigated in [6].…”

Section: Introductionmentioning

confidence: 99%

Static Large-Area Hydrogenation of Polycrystalline Silicon Thin-Film Solar Cells on Glass Using a Linear Microwave Plasma Source

Hidayat

Widenborg

Kumar

et al. 2012

IEEE J. Photovoltaics

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Hydrogenation of polycrystalline silicon thin-film solar cells on glass is performed to improve the open-circuit voltageV o c of the devices. The hydrogenation process is performed using linear microwave plasma sources that are capable of generating a uniform hydrogen-argon plasma over a large area. The substrate is fixed (i.e., does not move) during the hydrogenation process. The optical emission intensities from the hydrogen-argon plasma are recorded at two wavelengths using an optical emission spectroscopy system and are used to study the impact of several process parameters. The impact of these process parameters on the device's V o c is also studied. We demonstrate that this plasma reactor is able to hydrogenate samples with a size of up to 400 cm 2 . The uniformity of the hydrogenation process is evaluated by measuring the 1-sun V o c with a suns-V o c tester, giving voltage variations of less than ± 3%. The highest average V o c achieved in this study is 465 mV on a 10 cm × 10 cm textured sample and 428 mV on a 20 cm × 20 cm textured sample. In addition, secondary ion mass spectroscopy is used to measure the hydrogen concentration in the poly-Si films, giving an average concentration of about 6 × 10 19 cm −3 .

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Influence of Hydrogen Plasma on the Defect Passivation of Polycrystalline Si Thin Film Solar Cells

Cited by 35 publications

References 23 publications

PECVD Intermediate and Absorber Layers Applied in Liquid-Phase Crystallized Silicon Solar Cells on Glass Substrates

PECVD Intermediate and Absorber Layers Applied in Liquid-Phase Crystallized Silicon Solar Cells on Glass Substrates

Effects of absorber doping and post-deposition treatments on the performance of n-type poly-Si thin film solar cells on glass

Static Large-Area Hydrogenation of Polycrystalline Silicon Thin-Film Solar Cells on Glass Using a Linear Microwave Plasma Source

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