Influence of hydrogen incorporation on conductivity and work function of VO<sub>2</sub> nanowires

Kim, Jae‐Eun; Shin, Jung Yeol; Jang, Hyun-Seok; Jeon, Jun Woo; Hong, Won G.; Kim, Hae Jin; Choi, Jinsung; Kim, Gyu-Tae; Kim, Byung Hoon; Park, Jonghyurk; Choi, Young Jin; Park, Jeong Young

doi:10.1039/c9nr00245f

Cited by 11 publications

(12 citation statements)

References 44 publications

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“…The morphologies, roughness, and contact potential difference (CPD) were measured using interleave mode Kelvin probe force microscopy (KPFM), which can measure topography and surface potential simultaneously without an artifact resulting from height difference, since the tip explores the surface of the sample, maintaining tip-sample distance. 10 The fast scan axis size is 500 nm, and a tip velocity was 0.5 Hz for the samples. The commercial Pt/Ir coated cantilever (PPP-EFMR, Nanosensors) was used for the characterization.…”

Section: Characterizationmentioning

confidence: 99%

“…Chemical modication, including oxidation and hydrogenation, is a widely used method for controlling mechanical and electrical properties of various materials, including two dimensional sheets or nanowires. [10][11][12][13] In the case of UNCD, the material properties can be tuned by affecting crystal structure-inducing lattice distortion 14,15 and the band structure of graphene-donating extra carriers. 16,17 Furthermore, transition behavior can be controlled via atomic hydrogen incorporation; in the presence of hydrogen atoms in the matrix, the metallic phase does not transfer to the semiconducting phase and remains stable at room temperature due to hydrogen atoms.…”

Section: Introductionmentioning

confidence: 99%

“…33190 | RSC Adv., 2020,10,[33189][33190][33191][33192][33193][33194][33195] This journal is © The Royal Society of Chemistry 2020RSC Advances Paper Open Access Article. Published on 08 September 2020.…”

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confidence: 99%

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Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

2020

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Section: Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

2020

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“…Regarding the photoresponsive materials, halide perovskites have attracted great attention because of their excellent optoelectronic properties, [ 14–16 ] and can be applied in sensor, memory, photovoltaic unit and light‐emitting diode [ 17–20 ] for artificial intelligence, humanoid robotics, and flexible electronic etc. [ 21–33 ] Not only the phenomenon of negative photoresponse in halide perovskites has also been observed [ 34–38 ] but halide perovskites based synaptic devices have also been fabricated and studied. [ 2,39 ] However, most devices of those researches are based on polycrystalline perovskite film, in which the great amount of grain boundaries can cause high power consumption and gradual performances degradation ascribing to large leakage current and instability in ambient conditions, respectively.…”

Section: Introductionmentioning

confidence: 99%

Bidirectional Photoresponse in Perovskite‐ZnO Heterostructure for Fully Optical‐Controlled Artificial Synapse

Huang

et al. 2022

Advanced Optical Materials

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energy consumption and inherent speed limitations. Inspired by human neural system, communicating through synapses with the features of parallel distributed processing and integrated storage and computation, various neuromorphic devices including memristors and fieldeffect transistors have been employed to simulate synaptic functions to overcome the von Neumann bottleneck. [1][2][3] Synaptic plasticity such as long/short-term potentiation (LTP/STP), long/short-term depression (LTD/STD), and paired pulse facilitation/depression (PPF/PPD), have been mimicked by modulating device conductivity (i.e., synaptic weight). Among these synaptic devices, potentiation and depression are always triggered by electrical stimulation. As known the electronic technology suffers the problem of limited computing speed because of the bandwidth connection density trade-off. [4] Fortunately, optoelectronic synapses with the light stimuli exhibit potential for ultrafast computing with advantages of the low crosstalk, high bandwidth, and low power consumption, also can be applied in optical wireless communication. [5,6] Herein, the optoelectronic synapses are operated with direct light illumination and the output is interpreted from the change of electrical conductance. It is different from the photonic devices that are mentioned in the photonic integrated circuits, in which the light is illuminated through a waveguide and output is denoted by the transmittance/absorbance of light in the waveguide. [7,8] However, most of reported optoelectronic devices only show positive photoresponse corresponding to the potentiation behavior of synapses. The achievement of depression behavior still depends on electrical stimulation due to the unidirectional photoresponse of devices. Therefore, a device with bidirectional photoresponse to emulate both excitatory and inhibitory behaviors for a fully optical-controlled artificial synapse is highly desired.Recently, a few of fully optical-controlled artificial synapses have been reported, such as pyrenyl graphdiyne/graphene/ PbS heterostructure, [5] Bi 2 O 2 Se/graphene hybrid structure, [6] ZnO/PbS hybrid heterostructure, [9] oxygen-deficient/oxygenrich InGaZnO homojunction, and black phosphorus. [10][11][12][13] Both the excitatory and inhibitory synaptic behaviors of Compared with electrical synapses, optoelectronic synapses exhibit great potential for ultrafast computing and wireless communication in neuromorphic hardware with advantages of low crosstalk, high bandwidth, and low power consumption. However, due to the unidirectional photoresponse in most of optoelectronic synapses, the related researches still focus on the electrical stimulation of inhibitory behaviors. Herein, a synaptic device based on perovskite−ZnO heterostructure is prepared with the characteristic of bidirectional photoresponse and can realize both the potentiation and depression by ultraviolet (UV) and green light stimuli, respectively. Consecutive UV and green light stimuli for potentiation and depression reveal the reliability ...

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“…1D VO 2 nanowires or nanobeams are with near‐perfect crystalline structures and have shown promises in condensed matter physics and advanced devices . Some VO 2 nanowire‐based transistors, sensors, and thermal detectors are based on unique MIT characteristics and can work at near room temperature .…”

mentioning

confidence: 99%

Modulated Metal–Insulator Transition Behaviors in Vanadium Dioxide Nanowires with an Artificial Oxidized Domain

Wei

Huang

Wang

et al. 2019

Physica Rapid Research Ltrs

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Correlated vanadium dioxide (VO2) has shown promises in functional materials and advanced electronic devices with outstanding metal–insulator transition (MIT). The manipulations of MIT and structural phase transition in correlated oxides are among the major challenges in both fundamental science and technological applications. Herein, the modulation of MIT behaviors in one VO2 nanowire with an artificial oxidized domain induced by selected‐area chemical nanoengineering is described. The formation of an artificial oxidized domain enables to suppress MIT and stabilize the insulating phase above the MIT temperature of pristine VO2 nanowires, which leads to an enhanced MIT hysteresis and temperature. The creation of artificial domains and the modulation of MIT in correlated oxide nanowires help to both investigate the essential physics behind correlated nanomaterials and fabricate nanoscale multifunctional devices.

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Influence of hydrogen incorporation on conductivity and work function of VO₂ nanowires

Abstract: Effect of non-catalytic hydrogenation on the work function and charge transport properties of VO2 nanowires (NWs) was investigated.

Cited by 11 publications

References 44 publications

Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

Bidirectional Photoresponse in Perovskite‐ZnO Heterostructure for Fully Optical‐Controlled Artificial Synapse

Modulated Metal–Insulator Transition Behaviors in Vanadium Dioxide Nanowires with an Artificial Oxidized Domain

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Influence of hydrogen incorporation on conductivity and work function of VO2 nanowires

Abstract: Effect of non-catalytic hydrogenation on the work function and charge transport properties of VO2 nanowires (NWs) was investigated.

Cited by 11 publications

References 44 publications

Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

Bidirectional Photoresponse in Perovskite‐ZnO Heterostructure for Fully Optical‐Controlled Artificial Synapse

Modulated Metal–Insulator Transition Behaviors in Vanadium Dioxide Nanowires with an Artificial Oxidized Domain

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Influence of hydrogen incorporation on conductivity and work function of VO₂ nanowires