Functionalized and fully characterized graphene-based lubricant additives are potential 2D materials for energy-efficient tribological applications in machine elements, especially at macroscopic contacts. Two different reduced graphene oxide (rGO) derivatives, terminated by hydroxyl and epoxy-hydroxyl groups, were prepared and blended with two different molecular weights of polyethylene glycol (PEG) for tribological investigation. Epoxy-hydroxyl-terminated rGO dispersed in PEG showed significantly smaller values of the friction coefficient. In this condition, PEG chains intercalate between the functionalized graphene sheets, and shear can take place between the PEG and rGO sheets. However, the friction coefficient was unaffected when hydroxyl-terminated rGO was coupled with PEG. This can be explained by the strong coupling between graphene sheets through hydroxyl units, causing the interaction of PEG with the rGO to be non- effective for lubrication. On the other hand, antiwear properties of hydroxyl-terminated rGO were significantly enhanced compared to epoxy-hydroxyl functionalized rGO due to the integrity of graphene sheet clusters.

Optimized concentration of reduced graphene oxide (rGO) in the lube is one of the important factors for effective lubrication of solid body contacts. At sufficiently lower concentration, the lubrication is ineffective and friction/wear is dominated by base oil. In contrast, at sufficiently higher concentration, the rGO sheets aggregates in the oil and weak interlayer sliding characteristic of graphene sheets is no more active for providing lubrication. However, at optimized concentration, friction coefficient and wear is remarkably reduced to 70% and 50%, respectively, as compared to neat oil. Traditionally, such lubrication is described by graphene/graphite particle deposited in contact surfaces that provides lower shear strength of boundary tribofilm. In the present investigation, graphene/graphite tribofilm was absent and existing traditional lubrication mechanism for the reduction of friction and wear is ruled out. It is demonstrated that effective lubrication is possible, if rGO is chemically linked with PEG molecules through hydrogen bonding and PEG intercalated graphene sheets provide sufficiently lower shear strength of freely suspended composite tribofilm under the contact pressure. The work revealed that physical deposition and adsorption of the graphene sheets in the metallic contacts is not necessary for the lubrication.

Copper ion implantation and subsequent annealing at 600 C achieved high electrical conductivity of 95.0 (Xcm) À1 for ultrananocrystalline diamond (UNCD) films with carrier concentration of 2.8 Â 10 18 cm À2 and mobility of 6.8 Â 10 2 cm 2 /V s. Transmission electron microscopy examinations reveal that the implanted Cu ions first formed Cu nanoclusters in UNCD films, which induced the formation of nanographitic grain boundary phases during annealing process. From current imaging tunneling spectroscopy and local current-voltage curves of scanning tunneling spectroscopic measurements, it is observed that the electrons are dominantly emitted from the grain boundaries. Consequently, the nanographitic phases presence in the grain boundaries formed conduction channels for efficient electron transport, ensuing in excellent electron field emission (EFE) properties for copper ion implanted/annealed UNCD films with low turn-on field of 4.80 V/lm and high EFE current density of 3.60 mA/cm 2 at an applied field of 8.0 V/lm. V

Carbon nanomaterials such as nanotubes, nanoflakes/nanowalls, and graphene have been used as electron sources due to their superior field electron emission (FEE) characteristics. However, these materials show poor stability and short lifetimes, which prevent their use in practical device applications. The aim of this study was to find an innovative nanomaterial possessing both high robustness and reliable FEE behavior. Herein, a hybrid structure of self-organized multi-layered graphene (MLG)-boron doped diamond (BDD) nanowall materials with superior FEE characteristics was successfully synthesized using a microwave plasma enhanced chemical vapor deposition process. Transmission electron microscopy reveals that the as-prepared carbon clusters have a uniform, dense, and sharp nanowall morphology with sp diamond cores encased by an sp MLG shell. Detailed nanoscale investigations conducted using peak force-controlled tunneling atomic force microscopy show that each of the core-shell structured carbon cluster fields emits electrons equally well. The MLG-BDD nanowall materials show a low turn-on field of 2.4 V μm, a high emission current density of 4.2 mA cm at an applied field of 4.0 V μm, a large field enhancement factor of 4500, and prominently high lifetime stability (lasting for 700 min), which demonstrate the superiority of these materials over other hybrid nanostructured materials. The potential of these MLG-BDD hybrid nanowall materials in practical device applications was further illustrated by the plasma illumination behavior of a microplasma device with these materials as the cathode, where a low threshold voltage of 330 V (low threshold field of 330 V mm) and long plasma stability of 358 min were demonstrated. The fabrication of these hybrid nanowalls is straight forward and thereby opens up a pathway for the advancement of next-generation cathode materials for high brightness electron emission and microplasma-based display devices.

Enhanced electron field emission (EFE) properties have been observed for ultrananocrystalline diamond (UNCD) films grown on Au-coated Si (UNCD/Au-Si) substrates. The EFE properties of UNCD/Au-Si could be turned on at a low field of 8.9 V/μm, attaining EFE current density of 4.5 mA/cm(2) at an applied field of 10.5 V/μm, which is superior to that of UNCD films grown on Si (UNCD/Si) substrates with the same chemical vapor deposition process. Moreover, a significant difference in current-voltage curves from scanning tunneling spectroscopic measurements at the grain and the grain boundary has been observed. From the variation of normalized conductance (dI/dV)/(I/V) versus V, bandgap of UNCD/Au-Si is measured to be 2.8 eV at the grain and nearly metallic at the grain boundary. Current imaging tunneling spectroscopy measurements show that the grain boundaries have higher electron field emission capacity than the grains. The diffusion of Au into the interface layer that results in the induction of graphite and converts the metal-to-Si interface from Schottky to Ohmic contact is believed to be the authentic factors, resulting in marvelous EFE properties of UNCD/Au-Si.

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The γ-radiolysis derived chemical grafting of graphite nanosheets with poly(ethylene-glycol) results in a remarkable decrease in the friction coefficient and significantly enhanced antiwear characteristics of steel–steel sliding interfaces.

Conducting diamond nanowires (DNWs) films have been synthesized by N₂-based microwave plasma enhanced chemical vapor deposition. The incorporation of nitrogen into DNWs films is examined by C 1s X-ray photoemission spectroscopy and morphology of DNWs is discerned using field-emission scanning electron microscopy and transmission electron microscopy (TEM). The electron diffraction pattern, the visible-Raman spectroscopy, and the near-edge X-ray absorption fine structure spectroscopy display the coexistence of sp³ diamond and sp² graphitic phases in DNWs films. In addition, the microstructure investigation, carried out by high-resolution TEM with Fourier transformed pattern, indicates diamond grains and graphitic grain boundaries on surface of DNWs. The same result is confirmed by scanning tunneling microscopy and scanning tunneling spectroscopy (STS). Furthermore, the STS spectra of current-voltage curves discover a high tunneling current at the position near the graphitic grain boundaries. These highly conducting regimes of grain boundaries form effective electron paths and its transport mechanism is explained by the three-dimensional (3D) Mott's variable range hopping in a wide temperature from 300 to 20 K. Interestingly, this specific feature of high conducting grain boundaries of DNWs demonstrates a high efficiency in field emission and pave a way to the next generation of high-definition flat panel displays or plasma devices.