Modulated Metal–Insulator Transition Behaviors in Vanadium Dioxide Nanowires with an Artificial Oxidized Domain

Abstract

Correlated vanadium dioxide (VO2) has shown promises in functional materials and advanced electronic devices with outstanding metal–insulator transition (MIT). The manipulations of MIT and structural phase transition in correlated oxides are among the major challenges in both fundamental science and technological applications. Herein, the modulation of MIT behaviors in one VO2 nanowire with an artificial oxidized domain induced by selected‐area chemical nanoengineering is described. The formation of an artificial oxidized domain enables to suppress MIT and stabilize the insulating phase above the MIT temperature of pristine VO2 nanowires, which leads to an enhanced MIT hysteresis and temperature. The creation of artificial domains and the modulation of MIT in correlated oxide nanowires help to both investigate the essential physics behind correlated nanomaterials and fabricate nanoscale multifunctional devices.

Energy-adaptive resistive switching with controllable thresholds in insulator–metal transition

“…Device fabrication VO 2 nanowires were deposited on silica/silicon substrates as we previously reported. 51 Briey, V 2 O 5 powers were placed in the center of the quartz boat, and the clean substrate was placed downstream. The growth temperature was set at 900 °C, whereas the deposited time was about 20 minutes.…”

“…S2b and c †). [48][49][50][51][52] All these were helpful for the realization of a single-domain IMT process and the regulation of electron transport in the VO 2 -NWs. 53 Fig.…”

High quality VO2 thin films synthesized from V2O5 powder for sensitive near-infrared detection

“…Despite this, the Raman spectrum is typical of α‐V 2 O 5 , with its main features at 147, 285, 305, 405, 702, and 995 cm −1 , whereas the monoclinic VO 2 phase has a set of strong well-resolved bands, located at 194, 224, 262, 310, 387, and 612 cm −1 46 . Among these, the mode at 147 cm −1 (ω o(2) ) is associated with the in‐phase oscillation of vanadium (shear-like distortions), the band at 702 cm −1 (ω v-o(2)-v) ) is assigned to the asymmetric stretching of V–O (2) –V bridges, and the highest intensity feature at 995 cm −1 (ω v=o(1) ) corresponds to the stretching vibrations of V=O (1) vanadyl bonds in V 2 O 5 28 , 36 , 44 , 46 . Besides, the low-energy peaks at 194 and 224 cm −1 (ω v1 and ω v2 ) correspond to the motion of vanadium atoms along the c‐axis of the VO 2 crystal (stretching motion of V–V dimers), while the high-energy one at 612 cm −1 (ω o ) is associated with the V–O vibrations 32 , 36 , 46 .…”

“…Among these, the mode at 147 cm −1 (ω o(2) ) is associated with the in‐phase oscillation of vanadium (shear-like distortions), the band at 702 cm −1 (ω v-o(2)-v) ) is assigned to the asymmetric stretching of V–O (2) –V bridges, and the highest intensity feature at 995 cm −1 (ω v=o(1) ) corresponds to the stretching vibrations of V=O (1) vanadyl bonds in V 2 O 5 28 , 36 , 44 , 46 . Besides, the low-energy peaks at 194 and 224 cm −1 (ω v1 and ω v2 ) correspond to the motion of vanadium atoms along the c‐axis of the VO 2 crystal (stretching motion of V–V dimers), while the high-energy one at 612 cm −1 (ω o ) is associated with the V–O vibrations 32 , 36 , 46 . We subsequently compare these data with our own experimental Raman spectra to examine the samples' phase structure of each stage, as shown in Fig.…”

“…On the other hand, magnetron sputtering 8 , 12 – 14 , pulsed laser deposition 22 , 33 and molecular beam epitaxy 34 , are usually used to synthesize epitaxial films of VO 2 (constructed by the nanoparticles). Various factors that affect the MIT behavior of the resultant VO 2 have also been extensively investigated, including size 35 , morphology 2 , 12 , 13 , oxygen defect 22 , 36 , 37 , hydrogen 15 , and chemical doping 17 , 30 , 38 , etc.…”