Influence of high pressure on cathodoluminescence of cubic boron nitride

Abstract

It is shown that the pressure treatment of boron nitride (BNsph) polycrystals a t room temperature results in the change of broad band parameters (A, B, C) and zero-phonon lines of cathodoluminescent (CL) spectra, and in the appearance of RC centers. In the pressure treated ceramic samples BNsph the PC-1 (2.84 eV), PC-2 (2.325 eV), PC-3 (1.79 eV) centers of presumably interstitial nature are found. The comparative analysis of the dependence of the broad bands parameters and zero-phonon lines of the GC centers in the CL spectra of boron nitride on pressure makes i t possible t o connect the appearance of the A and B bands in the energy range 1.85 to 3.25 eV with electronic states in the band gap due to multi vacancy complexes based on boron and nitrogen vacancies, respectively, while the appearance of the C band (1.55 t o 1.85 eV) with the plastic deformation of BN,pti.Es wird gezeigt, daB eine Druckbehandlung von Bornitrid (BNspll)-Polykristallen bei Zimmertemperatur zu einer h d e r u n g der Parameter der breiten Banden (A, B, C) und der Null-Phononenlinien der Kathodolumineszenz (CL)-Spektren und dem Auftreten von RC-Zentren fuhrt. I n den druckbehandelten keramischen BNspi,-Proben werden PC-1 (2,84 eV)-, PC-2 (2,325 eV)-und PC-3 (1,79 eV)-Zentren mit wahrscheinlich Zwischengitternatur gefunden. Die vergleichende Analyse der Druckabhangigkeit der Parameter der breiten Banden und der Null-Phononenlinien der GC-Zentren im CL-Spektrum von Bornitrid ermoglicht, das Auftreten der Aund B-Banden im Energiebereich 1,85 bis 3,25 eV mit elektronischen Zustanden in der Bandlucke infolge Mehrfach-Vakanzenkomplexe auf der Basis von Bor-bzw. Stickstoff-Leerstellen zu verkniipfen, wahrend das Auftreten der C-Bande (1,55 bis 1,85 eV) mit der plastischen Deformation von BNsph verbunden ist.

Cathodoluminescence of cubic boron nitride films deposited by chemical vapor deposition

“…Compared with the previous works, the emission band at about 2.48 eV was considered to be the A and B bands that are caused by multivacancy complexes of boron and nitrogen vacancies in cBN single crystals. 5 In our films, the existence of boron and nitrogen vacancies were indeed demonstrated by the elemental fluctuation in the in-depth secondary ion mass spectroscopy measurements. 14 The main broad peak at about 3.12 eV closes to the band UCL ͑or US-1͒ luminescence centers reported previously.…”

“…However, few research works on the luminescence properties have been reported, and these works were performed mainly on the cBN crystals synthesized by high-temperature, high-pressure ͑HTHP͒ method. [2][3][4][5][6][7][8] Up to now, about 20 luminescence centers have been observed, but the origin of these luminescence centers has not been identified. For the cBN films deposited by physical or chemical vapor deposition, there has been only one work by Taylor et al, 9 which studied the deep-level emission spectra of nanocrystalline cBN films deposited by rf magnetron sputtering deposition.…”

Photoluminescence excitation spectroscopy in boron nitride nanotubes compared to microcrystalline h‐BN and c‐BN

“…Commercial hexagonal BN powder was used. Small single crystals of cubic BN were sintered at Institute of Solid State and Semiconductor Physics, National Academy of Belarus [7]. The experimental apparatus described in Ref.…”

“…Studying the excitation thresholds of the photoluminescence bands and correlating with expectations of band gaps can help in distinguishing h-BN, BN-nt, and impurity contributions to the spectra. In view of previous studies in the Riga laboratory of cubic-BN ceramic [6], and the fact that cubic-BN is the other structural paradigm in this intended study, single crystal samples [7] of c-BN have been included.…”

Theory of Oxygen-Boron Vacancy Defect in Cubic Boron Nitride: A DiamondNV−Isoelectronic Center

“…The O N −V B center also shares much of the characteristics of the GC-2 center often observed in c-BN. [9][10][11][12][13] Experimentally, optical properties of defects in c-BN have been investigated using photoluminescence (PL) and cathodoluminescence (CL) techniques. [9][10][11][12][13][14][15] Identification of defect center in c-BN using electron spin resonance (ESR) experiments have also been reported.…”