Influence of Fe Contamination in Czochralski-Grown Silicon Single Crystals on LSI-Yield Related Crystal Quality Characteristics

Miyazaki, Morimasa; Miyazaki, Sumio; Kitamura, Takafumi; Aoki, Toshihiko; Nakashima, Yutaka; Hourai, Masataka; Shigematsu, Takeshi

doi:10.1143/jjap.34.409

Cited by 17 publications

(8 citation statements)

References 19 publications

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“…[25][26][27] There is evidence that Fe enhances the formation of O-induced stacking faults. [28][29][30] These correlations do not necessarily imply the existence of Fe-O complexes since Si i 's are generated by oxygen precipitation. Electrical studies 31 of a deep hole trap, the T 3 center in Cz-Si, show that it consists of two defects.…”

Section: Experimental Informationmentioning

confidence: 99%

Iron in silicon: Interactions with radiation defects, carbon, and oxygen

2008

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First-principles theory is used to calculate the interactions between interstitial iron or the iron-boron pair and a vacancy, between interstitial iron and a divacancy, oxygen-vacancy pair, self-interstitial, and interstitial carbon, as well as substitutional carbon, interstitial oxygen, and the oxygen dimer in silicon. The structures, charge and spin states, binding energies, and, in some cases, vibrational spectra are predicted. The gap levels are estimated using the marker method. The strongest interactions involve vacancies, result in the formation of pairs of metastable defects, and profoundly change the electrical activity of the component species. Iron also traps at self-interstitial-type defects, but not at interstitial oxygen or substitutional carbon. Several observed but incompletely characterized defects are identified and trends in the behavior of Fe in Si are discussed.

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Section: Experimental Informationmentioning

confidence: 99%

Iron in silicon: Interactions with radiation defects, carbon, and oxygen

2008

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“…However, care must be taken when trying to compare results from those techniques, as in both cases effective MCLTh are measured and the surface component has a different impact on the measured values from these methods. 28 No appreciable influence of the substrate doping was observed on the MCLT properties of p-type wafers with resistivity in the range of 6 to 36 (1 cm.…”

Section: Introductionmentioning

confidence: 98%

Impact of Fe and Cu Contamination on the Minority Carrier Lifetime of Silicon Substrates

Rotondaro

Hurd

Kaniava

et al. 1996

J. Electrochem. Soc.

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The effects of trace amounts of Fe and Cu in p-and n-type silicon were investigated with microwave photoconductance decay and surface photovoltage. The wafers received controlled amounts of surface contamination of Fe and Cu that are relevant for ultralarge scale integrated technologies. The substrate doping type has a strong impact on the effect of the metallic impurities. Fe, as expected, strongly degrades the minority carrier lifetime of p-type substrates. On the other hand, the impact of Fe on n-type silicon is at least one order of magnitude lower than on p-type. In contrast, Cu is highly detrimental to n-type material, but has no significant impact on the minority carrier properties of p-type silicon for the contamination levels studied.

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“…During the transient PTR signal evolution, various kinetic, annealing 15 and redistribution Fe processes can take place even at very low fluences changing thermoelectronic properties in p-type Si wafers. 12,14,16 The rapid laser-scan conditions produce minimal disturbance and redistribution of Fe centers and thus offer a more reliable mapping of the original Fe distribution.…”

Section: Resultsmentioning

confidence: 99%

“…In this work, this method has been used to measure µ-PCD lifetimes before and after Fe-B dissociation and to extract [Fe] concentrations. 7,8,[12][13][14] The lifetime/iron concentration dependence is strong for p-Si with Fe in interstitial state and much less for Fe as FeB complex. For low injection levels the lifetime in the activated Fe i state is smaller that in the FeB complex.…”

Section: (Received June 29 2000; Accepted October 30 2000)mentioning

confidence: 99%

Minority carrier lifetime and iron concentration measurements on p-Si wafers by infrared photothermal radiometry and microwave photoconductance decay

Rodrı́guez

Mandelis

Pan

et al. 2000

Journal of Applied Physics

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A comparative study of electronic transport properties of p-Si wafers intentionally contaminated with Fe was performed using infrared photothermal radiometry (PTR) and microwave photoconductance decay (µ-PCD). Strong correlations were found between PTR and µ-PCD lifetimes in a lightly contaminated wafer with no significant PTR transient behavior. The absolute PTR lifetime values were larger than the local averaged µ-PCD values, due to the different excitation wavelengths and probe depths. In a heavily contaminated wafer the µ-PCD and PTR lifetime correlation was poorer. PTR measurements were highly sensitive to Iron concentration, most likely due to the dependence of the bulk recombination lifetime on it. Rapid-scanned (non-steady-state) PTR images of the wafer surface exhibited strong correlations with both µ-PCD lifetime and Iron concentration images in both heavily and lightly contaminated wafers. For the lightly and uniformly contaminated wafer, PTR scanning imaging was found to be more sensitive to iron concentration and lifetime variations than µ-PCD images.

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Influence of Fe Contamination in Czochralski-Grown Silicon Single Crystals on LSI-Yield Related Crystal Quality Characteristics

Cited by 17 publications

References 19 publications

Iron in silicon: Interactions with radiation defects, carbon, and oxygen

Iron in silicon: Interactions with radiation defects, carbon, and oxygen

Impact of Fe and Cu Contamination on the Minority Carrier Lifetime of Silicon Substrates

Minority carrier lifetime and iron concentration measurements on p-Si wafers by infrared photothermal radiometry and microwave photoconductance decay

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