Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Wahab, Q.; Ellison, A.; Henry, Anne; Janzén, Erik; Hallin, Christer; Persio, J. Di; Martinez, Rafael Perez

doi:10.1063/1.126456

Cited by 166 publications

(111 citation statements)

References 12 publications

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“…It has been reported previously [32] that with a screw dislocation concentration of ∼10 4 cm −2 the maximum breakdown voltage ( ) of samples with diameter 300-500 m between 350 and 400 V can be reached. For our samples with area 4000 × 4000 m the breakdown voltage was ∼140-160 V.…”

Section: Resultsmentioning

confidence: 99%

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Atabaev

Juraev

Pak

2017

Advances in Condensed Matter Physics

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P-i-n 4H-SiC⟨Al⟩ diode structures are fabricated by a new approach which is low temperature diffusion of aluminium (Al) in SiC using flow of vacancy defects from surface into volume of crystal. In conventional diffusion in SiC, the operating temperature is usually >2050 ∘ C while, in this approach, the diffusion temperature is between 1150 and 1300 ∘ C. As the conditions of formation of junction in this method essentially differ from conventional diffusion (low temperature and process of diffusion are accompanied by forming structure defects), it is interesting to identify the advantages and disadvantages of a new method of diffusion. Fabricated p-i-n structures have low breakdown voltage between 80 and 140 V (due to the influence of dislocations and micropipes) and are capable of operating at temperatures up to 300 ∘ C. Structure has fast switching time and duration of the reverse recovery current less than 10 ns. We believe that because of low diffusion temperature, the concentration of nitrogen related trapping levels is relatively low and as a result the fast switching time is observed in our samples. It has been shown that this low temperature diffusion technology can be used to fabricate -region and high resistive -region of SiC diode in single-step process.

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Section: Resultsmentioning

confidence: 99%

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Atabaev

Juraev

Pak

2017

Advances in Condensed Matter Physics

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“…For samples with a thickness of 300-400 μm, the breakdown voltage occurs to be within the range of ) in the studied SiC crystals. It has been reported previously [47] that, with a screw dislocation concentration of…”

Section: Resultsmentioning

confidence: 99%

Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

Atabaev

Juraev

2018

Advances in Materials Science and Engineering

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Novel method of boron diffusion at low temperatures between 1150 and 1300°C is used for the formation of both p-i SiC junction and i-region in one technological process. As the junction formation conditions in this method are essentially different from those in the conventional diffusion (low temperatures and process of diffusion are accompanied by formation of structure defects), it is of special interest to identify advantages and disadvantages of a new method of diffusion. Developed SiC p-i-n junction diodes have fast switching time, and the duration of the reverse recovery current is less than 10 ns with a breakdown voltage of 120-140 V. Fabricated diodes possess capability to operate at temperatures up to 300°C. As the temperature of diffusion process is lower than the melting temperature of silicon, this new technology allows fabrication of diodes on the base of SiC/Si epitaxial structures.

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“…For example, the micropipes increase leakage current and reduce the breakdown voltage of SiC devices (Neudeck & Powell, 1994;Wahab et al, 2000). All the samples used in this section were 6H-SiC wafers grown by sublimation method.…”

Section: Characterizationsmentioning

confidence: 99%

Bulk Growth and Characterization of SiC Single Crystal

Ning¹

2011

Silicon Carbide - Materials, Processing and Applications in Electronic Devices

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Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Cited by 166 publications

References 12 publications

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al

Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

Bulk Growth and Characterization of SiC Single Crystal

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