Influence of electron beam and ultraviolet irradiations on graphene field effect transistors

Iqbal, Muhammad Zahir; Siddique, Salma; Anwar, Nadia

doi:10.1016/j.optmat.2017.06.039

Cited by 8 publications

(22 citation statements)

References 38 publications

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“…This shift in the peaks toward the higher wavenumber confirms the p-type doping in graphene. [21][22][23] Furthermore, the X-ray photoelectron spectroscopy (XPS) analysis is also implemented to examine the effect of an oxide layer and PFSA doping. Figure 3A,B demonstrates the XPS measurements of the device before and after introducing interlayer and PFSA doping respectively.…”

Section: Resultsmentioning

confidence: 99%

Effect of an optimal oxide layer on the efficiency of graphene‐silicon Schottky junction solar cell

Aftab

Iqbal

Alam

et al. 2021

Intl J of Energy Research

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The harvesting of solar energy through silicon/graphene Schottky junction photovoltaic cell has been widely investigated in the last decade but the surface recombination at interface limits the high conversion efficiency. We have demonstrated the utilization of the optimum thickness (1.5 nm) of Al 2 O 3 between the interfaces of graphene and n-type Si as an interlayer to reduce the surface recombination along with chemical doping of perfluorinated polymeric sulfonic acid (PFSA) is used as a p-type dopant to modulate the work function of graphene. The Kelvin probe force microscopy (KPFM) analysis revealed that the p-doping enhances the graphene work function from 4.65 to 4.8 eV. The transport measurements are performed to study the shift in charge neutrality point of graphene. Furthermore, the effect of PFSA doping on graphene is also confirmed through Raman spectroscopy. The maximum value of power conversion efficiency (PCE) was found to be 13.52% (100 mW cm À2 , AM 1.5) by introducing an optimal oxide layer and PFSA doping.The device exhibits the photoresponsivity of 0.10 AW À1 . We believe that our findings will provide a route toward the development of new photovoltaic (PV) cells.

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Section: Resultsmentioning

confidence: 99%

Effect of an optimal oxide layer on the efficiency of graphene‐silicon Schottky junction solar cell

Aftab

Iqbal

Alam

et al. 2021

Intl J of Energy Research

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“…The most common one is the electric signal jitter caused by vibration. In addition, since graphene is almost transparent, if the substrate is SiO 2 /Si, then electromagnetic radiation such as ultraviolet rays can easily pass through the insulating layer to cause a similar gate effect on the Si layer, which affects the conductivity of graphene [2]. Note that if the linker with the fluorescent effects such as PBASE is used as the linker, it may also absorb electromagnetic radiation such as ultraviolet rays, thereby affecting the biosensing signal.…”

Section: Signal Interferencementioning

confidence: 99%

Challenges and Outlook

Wang

Hossain

Zhao

et al. 2021

Graphene Field-Effect Transistor Biosensors

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Since the graphene field-effect transistor biosensor was reported in 2009, it has been widely developed around various biological interactions. Series exciting research results are reported gradually in the past decade, which also indicate that its great potential for practical clinical testing applications. However, there are still many problems that need to be improved, such as how to improve the quality of the graphene film, and how to standardize the graphene transfer and the surface modification process. In addition, from the perspective of industrialization, how to reduce signal disturbance, how to integrate with semiconductor technology and a series of engineering problems also need time to solve. This chapter focuses on the current problems facing industrialization, including graphene quality problems, standardization problems, etc., and proposes improvement suggestions.

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“…The Dirac equation describes the electron transport in graphene to explain the mobility of charge carriers [13,14]. Several graphene doping methods have been investigated in recent studies that include chemical doping, electrochemical doping, ion or electron beam irradiation, metal decoration or deposition, electrostatic doping, electrical stress-induced doping, absorption and desorption of gas molecules, and ultra-violet (UV) light illumination [14][15][16][17][18][19][20][21][22][23][24][25]. Graphene surface doping, without effect on the honeycomb structure which can be caused by other methods including chemical doping or the absorption and desorption of gas molecules, is usually unstable under experimental conditions and in a laboratory atmosphere [18,19,26].…”

Section: Introductionmentioning

confidence: 99%

“…There are many methods, including e-beam irradiation or plasma treatment of graphene, that can be applied to tune its electrical properties but these result in local defect formations in the graphene and affect its chemical properties [17,20,26]. Although there are some studies that have been reported on the carrier doping of the graphene by deep ultra-violet (DUV) irradiation, the effect of DUV on graphene is yet to be thoroughly explored [20,[22][23][24][25]27]. The experimental conditions under which DUV irradiation is carried out can introduce either p or n-type stable or reversible doping to the graphene [20,[22][23][24][25]27].…”

Section: Introductionmentioning

confidence: 99%

“…Although there are some studies that have been reported on the carrier doping of the graphene by deep ultra-violet (DUV) irradiation, the effect of DUV on graphene is yet to be thoroughly explored [20,[22][23][24][25]27]. The experimental conditions under which DUV irradiation is carried out can introduce either p or n-type stable or reversible doping to the graphene [20,[22][23][24][25]27]. The coating of graphene with different materials and polymers that can absorb light is a useful way to reduce the effect on its properties [28].…”

Section: Introductionmentioning

confidence: 99%

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Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

et al. 2021

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The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O2, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N2 gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O2 showed ~15% de-doping over 4 months. The n-type doping in pure N2 exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.

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Influence of electron beam and ultraviolet irradiations on graphene field effect transistors

Cited by 8 publications

References 38 publications

Effect of an optimal oxide layer on the efficiency of graphene‐silicon Schottky junction solar cell

Effect of an optimal oxide layer on the efficiency of graphene‐silicon Schottky junction solar cell

Challenges and Outlook

Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

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